BFG193

BFG193 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-13-1996 BFG 193 NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• fT = 8GHz F = 1.3dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 193 BFG193 Q62702-F1291 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 mA Base current IB 10 Total power dissipation TS ≤ 87 °C Ptot 600 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 105 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-13-1996 BFG 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-13-1996 BFG 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.6 0.9 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 2 - Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.1 1.3 dB Power gain 2) IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 15.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 13.5

Semiconductor Group 4 Dec-13-1996 BFG 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 250 300 350 400 450 500 550 600 mW 700 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Dec-13-1996 BFG 193 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pF 1.1 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 GHz 9.0 fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC dB G 10V 0.7V

Semiconductor Group 6 Dec-13-1996 BFG 193 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V R dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =30mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 10 20 30 40 50 60 mA 80 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =30mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=30mA