BFG193 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
u , L/ ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFG193
DESCRIPTION
- Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz
- High Gain I S2ie I 2= 13.5 dB TYP. @VCE= 8 V,lc = 30 mA,f = 900 MHz
APPLICATIONS
- Designed for use in low noise .high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCES VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 0.6 150 -65-150 UNIT V V V V mA mA W SOT- 2 3 package t<l ""^ (cr<-...,.^ ^Sctt>; fy^' H | I— A III t t I Marking a c 1 1 U' U _L
1 I*D*I
h— e— 1 \\I j=J ;-j L 1 : Base - : Emitter 3 ; Collector ML DIM A B V D H K L mm MIN 0,57 1. 19 2. ID 0. S3 1. 7S :, 65 1. 10 0, ic 0. 076 MAX 0. 31 l. ;0 :. 50 1.05 2.05 3. 05 1, 30 o. ei 0. 17S U NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)ceo ICES ICBO IEBO hFE fi COB PG PG I S2le I 2 I S21e 1 2 NF NF PARAMETER Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain— Bandwidth Product Output Capacitance Power Gain Power Gain Insertion Power Gain Insertion Power Gain Noise Figure Noise Figure CONDITIONS lo= 1mA; IB= 0 VCE= 20V; VBE= 0 VCB=10V; IE=0 VEB= 1V; lc= 0 lc= 30mA ; VCE= 8V lc= 50mA ; VCE= 8V; f= 500MHz lE=0;VCB=10V;f=1MHz lc= 30mA ; VCE= 8V; f= 900MHz lc= 30mA ; VCE= 8V; f= 1 ,8GHz lc= 30mA ; VGE= 8V; f= 900MHz lc= 30mA ; VCE= 8V; f= 1 ,8GHz lc= 10mA ; VCE= 8V; f= 900MHz lc= 1 0mA ; VCE= 8V; f= 1 .8GHz MIN TYP. 0.6 15.5 13.5 1.3 2.1 MAX 100 0.1 200 0.9 UNIT V nA uA uA GHz pF dB dB dB dB dB dB