BFG135A

BFG135A SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-16-1996 BFG 135A NPN Silicon RF Transistor

• For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor fT = 6 GHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 135A BFG135A Q62702-F1322 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 150 mA Base current IB 20 Total power dissipation TS ≤ 100 °C Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 50 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 25 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250

Semiconductor Group 3 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 100 mA, VCE = 8 V, f = 200 MHz fT 4.5 6 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 1.3 1.8 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.8 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 7.5 - Noise figure IC = 30 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 3.7 dB Power gain 2) IC = 100 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma Transducer gain IC = 100 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 Third order intercept point IC = 100 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω IP3 - 38 - dBm

Semiconductor Group 4 Dec-16-1996 BFG 135A Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Dec-16-1996 BFG 135A Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pF 4.0 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 GHz 7.0 fT 10V 5V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V

Semiconductor Group 6 Dec-16-1996 BFG 135A Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz IC =100mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 20 40 60 80 100 120 mA 160 IC dBm IP3 10V 8V Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =100mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 2V 1V0.7 IC =100mA