BFC60 SEME-LAB | Alldatasheet
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Characteristic Test Conditions Min. Typ. Max. Unit BV DSS R DS(ON) IDSS IGSS VGS(off) C iss C oss C rss ton toff VSD |YFS | VDSS ID IDM VGS PD TJ , TSTG 1 2 3 16.51 (0.650) 14.22 (0.560) 3.05 (0.120) 2.54 (1.000) 10.67 (0.420) 9.65 (0.380) 5.33 (0.210) 4.83 (0.190) 6.86 (0.270) 5.84 (0.230) 4.83 (0.190) 3.56 (0.140) 1.40 (0.020) 0.51 (0.055) 3.73 (0.147) 3.53 (0.139)Dia. 1.78 (0.070) 0.99 (0.390) 6.35 (0.250) 4.60 (0.181) 14.73 (0.580) 12.70 (0.500) 1.02 (0.040) Nom. 5.08 (0.200) Nom. 0.66 (0.026) 0.41 (0.016) 2.92 (0.115) 2.03 (0.080) TO220–AC Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation Operating and Storage Junction Temperature Range VGS = 0V , ID = 1mA VGS =10V , ID = 50mA VDS = 1200V , VGS = 0V VGS = ±20V , VDS = 0V VDS = 10V , ID = 1.0mA VDS = 20V f = 1MHz VGS = 10V ID = 50mA VGS = 0 , IS = 0.1A VDS = 20V , ID = 50mA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 1500 0.1 0.2 ±20 –55 to +150 V A A V W Drain – Source Breakdown Voltage Drain – Source On State Resistance Zero Gate Voltage Drain Current Gate – Source Leakage Current Cutoff Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Diode Forward Voltage Forward Transfer Admittance 1500 140 200 100 ±100 1.5 3.5 3.0 400 1.0 1.5 50 100 V Ω µA nA V pF ns V mS ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated) ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated) VDSS 1500V ID(cont) 0.1A R DS(on) 140ΩΩ Pin 1 – Gate Pin 2 – Drain Pin 3 – Source