BFC10

BFC10 SEME-LAB | Alldatasheet

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Characteristic Test Conditions Min. Typ. Max. Unit BV DSS ID(ON) R DS(ON) IDSS IGSS VGS(TH) VDSS ID IDM , ILM VGS PD TJ , TSTG TL R 38.0 (1.496) 38.2 (1.504) 30. 1 ( 1. 185) 30. 3 ( 1. 193) 14.9 (0.587) 15.1 (0.594) 3.3 (0.129) 3.6 (0.143) 7. 8 ( 0. 307) 8. 2 ( 0. 322) 31. 5 ( 1. 240) 31. 7 ( 1. 248) 4.0 (0.157) (2 Places)R = 4. 0 ( 0. 157) 4. 2 ( 0. 165) 4. 1 ( 0. 161 4. 3 ( 0. 169 4. 8 ( 0. 187) 4. 9 ( 0. 193) (4 places) W = H = 8. 9 ( 0. 350) 9. 6 ( 0. 378) 11. 8 ( 0. 463) 12. 2 ( 0. 480) Hex Nut M4 (4 places) 12. 6 ( 0. 496) 12. 8 ( 0. 504) 25. 2 (0. 992) 25. 4 (1. 000) 0. 75 ( 0. 030) 0. 85 ( 0. 033) 5. 1 (0. 201) 5. 9 (0. 232) 1. 95 ( 0. 077) 2. 14 ( 0. 084) SOT–227 Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 and Inductive Current Clamped Gate – Source Voltage Total Power Dissipation @ T case = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. V GS = 0V , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 2.5mA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 1000 20.5 ±30 520 4.16 –55 to 150 300 V A A V W W / °C Drain – Source Breakdown Voltage On State Drain Current Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage 1000 20.5 0.50 250 1000 ±100 V A Ω µA nA V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BFC10 LAB SEME VDSS 1000V ID(cont) 20.5A R DS(on) 0.50ΩΩ * Source 2 may be omitted, shorted to Source 1 or used for Gate drive circuit. 4TH GENERATION MOSFET Terminal 1 Source 2* Terminal 2 Drain Terminal 3 Gate Terminal 4 Source 1

Characteristic Test Conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 20.5 1.8 640 1280 2000 8 16 32 IS ISM VSD trr Q rr VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns µC Characteristic Min. Typ. Max. Unit 2500 LD LS VIsolation C Isolation Torque Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz Maximum Torque for Device Mounting Screws and Electrical Terminations nH V pF in–lbs Characteristic Min. Typ. Max. Unit 0.24 0.05 R θJC R θCS Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) °C/W DYNAMIC CHARA CTERISTICS SOURCE – DRAIN DIODE RA TINGS AND CHARA CTERISTICS PACKA GE CHARA CTERISTICS THERMAL CHARA CTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 0V VDS = 25V f = 1MHz V GS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6Ω pF nC ns 5425 6500 710 995 230 350 235 370 24 36 107 160 15 30 15 30 47 75 15 30 LAB SEM E CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.