BF999 SIEMENS | Alldatasheet
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Technical content
Silicon N Channel MOSFET Triode BF 999
- For high-frequency stages up to 300 MHz, preferably in FM applications Maximum Ratings Type Marking Package 1)Pin Configuration BF 999 Q62702-F1132LB SOT-23 1 2 3 G D S Ordering Code (tape and reel) Parameter Symbol Values Unit Drain-source voltage VDS 20 V Thermal Resistance Junction - ambient 2) Rth JA ≤ 450 K/W Total power dissipation,TA ≤ 60 ˚C Ptot 200 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate-source peak current ± IGSM 10 Channel temperature Tch 150 mADrain current ID 30 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. VDrain-source breakdown voltage ID = 10µA, –VGS = 4 V V(BR) DS 20 – – nAGate-source leakage current ± VGS = 5 V,VDS = 0 ± IGSS ––5 0 Gate-source breakdown voltage ± IGS = 10 mA,VDS = 0 ± V(BR) GSS 6.5 – 12 VGate-source pinch-off voltage VDS = 10 V,ID = 20µA – VGS (p) – – 2.5 mADrain current VDS = 10 V,VGS = 0 IDSS 5–1 8 mSForward transconductance VDS = 10 V,ID = 10 mA,f = 1 kHz gfs 14 16 – pFOutput capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C dss –1– Noise figure (test circuit) VDS = 10 V,ID = 10 mA,f = 200 MHz, G G = 2 mS,G L = 0.5 mS F –1– pFGate input capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C gss – 2.5 – fFReverse transfer capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C dg –2 5 – dBPower gain (test circuit) V DS = 10 V,ID = 10 mA, f = 200 MHz, G G = 2 mS,G L = 0.5 mS G p –2 5 – AC Characteristics UnitValuesParameter Symbol min. typ. max. DC Characteristics
Total power dissipationPtot =f (TA ) Gate transconductancegfs =f (V GS ) VDS = 10 V,IDSS = 10 mA,f = 1 kHz Output characteristicsID =f (V DS ) Drain currentID =f (V GS ) VDS = 10 V
Gate input capacitanceC gss =f (V GS ) VDS = 10 V,IDSS = 10 mA,f = 1 MHz Reverse transfer capacitance C dg =f (V DS ) IDSS = 10 mA,f = 1 MHz, VGS = 0 Output capacitanceC dss =f (V DS ) VGS = 0,IDSS = 10 mA,f = 1 MHz Gate input admittancey11s VDS = 10 V,VGS = 0, IDSS = 10 mA, (common-source)
Test circuit for power gain and noise figure f = 200 MHz Gate forward transfer admittancey21s VDS = 10 V,VGS = 0, IDSS = 10 mA, (common-source) Output admittancey22s VDS = 10 V,VGS = 0, IDSS = 10 mA, (common-source)