BF999_07 INFINEON | Alldatasheet

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Technical content

Silicon N-Channel MOSFET Triode

  • For high-frequency stages up to 300 MHz preferably in FM applications
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 LBs 1=G 2=D 3=S - - - SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Continuous drain current ID 30 mA Gate-source peak current ± IGSM 10 mA Total power dissipation TS ≤ 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2) Rthchs ≤ 370 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage I D = 10 µA, -VGS = 4 V V(BR)DS 20 - - V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ±V(BR)GSS 6.5 - 12 Gate-source leakage current ± VGS = 5 V, VDS = 0 ± IGSS - - 50 nA Drain current VDS = 10 V, VGS = 0 IDSS 5 10 16 mA Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA -VGS(p) - 0.8 1.5 V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Forward transconductance V DS = 10 V, ID = 10 mA gfs 14 20 - mS Gate input capacitance VDS = 10 V, ID = 10 mA, f = 10 MHz Cgss - 2.5 - pF Output capacitance VDS = 10 V, ID = 10 mA, f = 10 MHz Cdss - 0.9 - pF Power gain VDS = 10 V, ID = 10 mA, f = 45 MHz Gp - 27 - dB Noise figure VDS = 10 V, ID = 10 mA, f = 45 MHz F - 2.1 - dB

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 mW 250 Ptot Output characteristics ID = ƒ(VDS) 0 5 10 V 20 VDS mA ID 0.1V 0.2V 0.3V -0.1V -0.2V -0.3V -0.4V Gate transconductance gfs = ƒ(VGS) VGS mS Gfs Drain current ID = (VGS) -1 V 1 VGS mA ID

Gate input capacitance Cgss = ƒ(VGS) -2 -1 V 1 VGS pF CgSS Output capacitance Cdss = ƒ(VDS) 0 5 V 15 VDS pF CdSS

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

81726 München, Germany

© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.