BF999

BF999 INFINEON | Alldatasheet

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Silicon N-Channel MOSFET Triode /G01 For high-frequency stages up to 300 MHz preferably in FM applications VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 LBs 1 = G 2 = D 3 = S SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current /G01/G02 IGSM 10 mA Total power dissipation, TS /G03 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Channel - soldering point1) Rthchs /G01 370 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V V(BR)DS 20 - - V Gate-source breakdown voltage /G01 /G01 IGS = 10 mA, VDS = 0 /G01 /G01 V(BR)GSS 6.5 - 12 Gate-source leakage current /G01 /G01 VGS = 5 V, VDS = 0 /G01 IGSS - - 50 nA Drain current VDS = 10 V, VGS = 0 IDSS 5 - 18 mA Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA - VGS (p) - - 2.5 V AC characteristics Forward tranconductance V DS = 10 V, ID = 10 mA gfs 14 16 - mS Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cgss - 2.5 - pF Reverse tranfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdg - 25 - fF Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdss - 1 - pF Power gain VDS = 10 V, ID = 10 mA, f = 200 MHz Gp - 25 - dB Noise figure VDS = 10 V, ID = 10 mA, f = 200 MHz F - 1 -

Output characteristics ID = f (VDS) EHT07308BF 999 Ι D DSV VGS = mA 51 0 1 5 V V 0.6 V 0.4 V 0.2 V -0.2 V -0.4 V V-0.6 0.8 Total power dissipation Ptot = f(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Gate transconductance gfs = f (VGS) -10 EHT07309BF 999 gfs GSV

012 V 3

Drain current ID = f (VGS) -10 EHT07310BF 999 GSV Ι D mA

01 V 2

Gate input capacitance Cgss = f (VGS) -20 EHT07311BF 999 Cgss GSV -1 01 V pF Output capacitance Cdss = f (VDS) 00.0 EHT07312BF 999 Cdss DSV 5 10 15 V 0.5 1.0 1.5 pF 2.0 Reverse transfer capacitance Cdg = f (VDS) EHT07313BF 999 Cdg DSV 5 10 15 V 100 150 fF 200 Gate input admittance y11s (common-source) EHT07314BF 999 b 11sg 11s 100 200 300 400 500 600 700 = 800f 123 m S 4 mS MHz MHz MHz MHz MHz MHz MHz MHz MHz

Gate forward transfer admittance y21s (common-source) 4-15 EHT07315BF 999 b 21sg 21s = 800f 6 8 10 12 14 mS 16 -10 mS 700 600 500 400 300 200 100 MHz MHz MHz MHz MHz MHz MHz MHz MHz Output admittance y22s (common-source) EHT07316BF 999 b 22sg mS22s 100 200 300 400 500 600 700 = 800 f MHz MHz MHz MHz MHz MHz MHz MHz MHz Test circuit for power gain and noise figure f = 200 MHz EHM07024 Dr Input 60 Ω 60 Output Ω15 pF 1 nF 1 nF BB515 Ω270 k Ω270 k VDSVtunVtunVG1S 270 kΩ BB515 1 nF 15 pF 1 nF