BF998

BF998 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

• Short-channel transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz Maximum Ratings Type Marking Package 1)Pin Configuration BF 998 Q62702-F1129MO SOT-143 1 2 3 4 S D G 2 G 1 Ordering Code (tape and reel) Parameter Symbol Values Unit Drain-source voltage VDS 12 V Thermal Resistance Junction - soldering point Rth JS < 370 K/W Total power dissipation,TS < 76 ˚C Ptot 200 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate 1/gate 2 peak source current ± IG1/2SM 10 Channel temperature Tch 150 mADrain current ID 30 1) For detailed information see chapter Package Outlines.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. VDrain-source breakdown voltage ID = 10µA,– VG1S = –VG2S = 4 V V(BR) DS 12 – – nAGate 1-source leakage current ± VG1S = 5 V,VG2S =VDS = 0 ± IG1SS ––5 0 Gate 1-source breakdown voltage ± IG1S = 10 mA,VG2S =VDS = 0 ± V(BR) G1SS 8–1 2 Gate 2-source breakdown voltage ± IG2S = 10 mA,VG1S =VDS = 0 ± V(BR) G2SS 8–1 2 Gate 2-source leakage current ± VG2S = 5 V,VG1S =VDS = 0 ± IG2SS ––5 0 mADrain current VDS = 8 V,VG1S = 0, VG2S = 4 V IDSS 2–1 8 VGate 1-source pinch-off voltage VDS = 8 V,VG2S = 4 V, ID = 20µA – VG1S(p) – – 2.5 Gate 2-source pinch-off voltage VDS = 8 V,VG1S = 0, ID = 20µA – VG2S(p) ––2 DC Characteristics

atTA = 25 ˚C, unless otherwise specified. Control range (test circuit 2) V DS = 8 V,VG2S = 4 … – 2 V f = 800 MHz ΔG ps 40 – – dBNoise figure (test circuit 1) V DS = 8 V,ID = 10 mA,f = 200 MHz, G G = 2 mS,G L = 0.5 mS,VG2S = 4 V F – 0.6 – Noise figure (test circuit 2) V DS = 8 V,ID = 10 mA,f = 800 MHz, G G = 3.3 mS,G L = 1 mS,VG2S = 4 V F –1– UnitValues mS Parameter Forward transconductance VDS = 8 V,ID = 10 mA,VG2S = 4 V f = 1 kHz Symbol gfs min. typ. max. pFGate 1 input capacitance VDS = 8 V,ID = 10 mA,VG2S = 4 V f = 1 MHz C g1ss – 2.1 2.5 Gate 2 input capacitance VDS = 8 V,ID = 10 mA,VG2S = 4 V f = 1 MHz C g2ss – 1.2 – fFReverse transfer capacitance VDS = 8 V,ID = 10 mA,VG2S = 4 V f = 1 MHz C dg1 –2 5 – pFOutput capacitance VDS = 8 V,ID = 10 mA,VG2S = 4 V f = 1 MHz C dss – 1.05 – dBPower gain (test circuit 1) V DS = 8 V,ID = 10 mA,f = 200 MHz, G G = 2 mS,G L = 0.5 mS,VG2S = 4 V G ps –2 8 – Power gain (test circuit 2) V DS = 8 V,ID = 10 mA,f = 800 MHz, G G = 3.3 mS,G L = 1 mS,VG2S = 4 V G ps –2 0 – AC Characteristics

Total power dissipationPtot =f (TA ) Gate 1 forward transconductance gfs1 =f (V G1S ) VDS = 8 V,IDSS = 10 mA,f = 1 kHz Output characteristicsID =f (V DS ) VG2S = 4 V Gate 1 forward transconductance gfs1 =f (V G2S ) VDS = 8 V,IDSS = 10 mA,f = 1 kHz

Gate 1 forward transconductance gfs1 =f (ID ) VDS = 8 V,IDSS = 10 mA,f = 1 kHz Gate 2 input capacitanceC g 2ss =f (V G2S ) VG1S = 0 V,VDS = 8 V IDSS = 10 mA,f = 1 MHz Gate 1 input capacitanceC g1ss =f (V G1S ) VG2S = 4 V,VDS = 8 V,IDSS = 10 mA, f = 1 MHz Output capacitanceC dss =f (V DS ) VG1S = 0 V,VG2S = 4 V IDSS = 10 mA,f = 1 MHz

Drain currentID =f (V G1S ) VDS = 8 V Noise figureF =f (V G2S ) VDS = 8 V,VG1S = 0,IDSS = 10 mA, f = 200 MHz (see test circuit 1) Power gainG ps =f (V G2S ) VDS = 8 V,VG1S = 0,IDSS = 10 mA, f = 200 MHz (see test circuit 1) Power gain Gps =f (V G2S ) VDS = 8 V,VG1S = 0,IDSS = 10 mA, f= 800 MHz (see test circuit 2)

Noise figureF =f (V G2S ) VDS = 8 V,VG1S = 0,IDSS = 10 mA, f = 800 MHz (see test circuit 2) Gate 1 forward transfer admittancey 21s VDS = 8 V,VG2S = 4 V,VG1S = 0 IDSS = 10 mA (common-source) Gate 1 input admittancey11s VDS = 8 V,VG2S = 4 V,VG1S = 0, IDSS = 10 mA (common-source) Output admittancey22s VDS = 8 V,VG2S = 4 V,VG1S = 0 IDSS = 10 mA (common-source)

Test circuit 1 for power gain and noise figure f = 200 MHz,G G = 2 mS,G L = 0.5 mS Test circuit 2 for power gain and noise figure f = 800 MHz,G G = 3.3 mS,G L = 1 mS