BF998_07 INFINEON | Alldatasheet
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Technical content
BF998... Silicon N_Channel MOSFET Tetrode
- Short-channel transistor with high S / C quality factor
- For low-noise, gain-controlled input stage up to 1 GHz
- Pb-free (RoHS compliant) package1)
- Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R SOT143 SOT143R 1=S 1=D 2=D 2=S 3=G2 3=G1 4=G1 4=G2 MOs MRs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 12 V Continuous drain current ID 30 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Total power dissipation TS ≤ 76 °C, BF998, BF998R Ptot 200 Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2), BF998, BF998R Rthchs ≤ 370 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance
BF998... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V V(BR)DS 12 - - V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 8 - 12 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G2SS 8 - 12 Gate 1 source leakage current ±VG1S = 5 V, VG2S = VDS = 0 ±IG1SS - - 50 nA Gate 2 source leakage current ±VG2S = 5 V, VG2S = VDS = 0 ±IG2SS - - 50 nA Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V IDSS 5 9 15 mA Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA -VG1S(p) - 0.8 2.5 V Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) - 0.8 2
BF998... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Forward transconductance VDS = 8 V, ID = 10 mA, VG2S = 4 V gfs 20 24 - - Gate1 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 10 MHz Cg1ss - 2.1 2.5 pF Gate 2 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 10 MHz Cg2ss - 1.2 - pF Feedback capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 10 MHz Cdg1 - 25 - fF Output capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 10 MHz Cdss - 1.1 - pF Power gain VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gp dB Noise figure V DS = 8 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz F 2.8 1.8 dB Gain control range VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz ∆Gp 40 50 -
BF998... Total power dissipation Ptot = ƒ(TS) BF998, BF998R 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mW 220 Ptot Output characteristics ID = ƒ(VDS) VG2S = 4 V VG1S = Parameter 0 2 4 6 8 10 V 14 VDS mA ID 0.4V 0.2V -0.2V -0.4V Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 0 4 8 12 16 mA 24 ID mS gfs Gate 1 forward transconductance gfs1 = ƒ (VG1S) VG1S mS Gfs
BF998... Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S mA ID Power gain Gps = ƒ (VG2S) f = 45 MHz 0 1 2 V 4 VG2S dB Gps Noise figure F = ƒ (VG2S) f = 45 MHz 0 1 2 V 4 VG2S dB F Noise figure F = ƒ (VG2S) f = 800 MHz 0 1 2 V 4 VG2S dB F
BF998... Power gain Gps = ƒ (VG2S) f = 800 MHz 0 1 2 V 4 VG2S -10 dB Gps Gate 1 input capacitance Cg1ss = ƒ (VG1S) VG1S 1.2 1.4 1.6 1.8 2.2 pF 2.6 Cg1ss Output capacitance Cdss = ƒ(VDS) 0 2 4 6 8 V 12 VDS 0.5 1.5 2.5 pF Cdss
BF998...Package SOT143 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel RF s 2005, June Date code (YM) BFP181 Type code Pin 1 0.8 0.81.2 0.9 1.1 0.9 1.2 0.8 0.8 0.8 -0.05 +0.1 1.9 1.7 ±0.12.9 +0.1 -0.050.4 0.1 MAX.
0.25 M B
±0.11 10˚ MAX. 0.15 MIN. 0.2 AM 2.4 ±0.15 0.2 10˚ MAX.A 1.3 ±0.1 0...8˚ 2.6 3.15Pin 1 0.2 1.15 B Manufacturer
BF998...Package SOT143R 1.1 0.8 0.81.2 0.90.9 0.8 0.8 1.2 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2.6 3.15Pin 1 0.2 1.15 Reverse bar 2005, June Date code (YM) BFP181R Type code Pin 1 1.9 1.7 0.4-0.05 +0.1 +0.1 -0.050.8 B 2.9 ±0.1 0.2 A 0˚... 8˚ 10˚ 10˚ 0.1 MAX. 0.15 MIN. 1.3±0.1 2.4 ±0.15 1±0.1 AM0.2 MAX. MAX. Manufacturer
BF998... Edition 2006-02-01 Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.