BF998 INFINEON | Alldatasheet

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Technical content

BF998... Silicon N_Channel MOSFET Tetrode

  • Short-channel transistor with high S / C quality factor
  • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R BF998W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 MOs MRs MR Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 12 V Continuous drain current ID 30 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Total power dissipation TS ≤ 76 °C, BF998, BF998R TS ≤ 94 °C, BF998W Ptot 200 200 Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF998, BF998R BF998W Rthchs ≤ 370 ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BF998...

Electrical Characteristics

Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V V(BR)DS 12 - - V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 8 - 12 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G2SS 8 - 12 Gate 1 source leakage current ±VG1S = 5 V, VG2S = VDS = 0 ±IG1SS - - 50 nA Gate 2 source leakage current ±VG2S = 5 V, VG2S = VDS = 0 ±IG2SS - - 50 nA Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V IDSS 5 9 15 mA Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA -VG1S(p) - 0.8 2.5 V Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) - 0.8 2

BF998... Parameter Symbol Values Unit min. typ. max. AC Characteristics Forward transconductance VDS = 8 V, ID = 10 mA, VG2S = 4 V gfs 20 24 - - Gate1 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg1ss - 2.1 2.5 pF Gate 2 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg2ss - 1.2 - pF Feedback capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdg1 - 25 - fF Output capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdss - 1.1 - pF Power gain VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gp dB Noise figure VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz F 2.8 1.8 dB Gain control range VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz ∆Gp 40 50 -

BF998... Total power dissipation Ptot = ƒ(TS) BF998, BF998R 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mA 220 Ptot Total power dissipation Ptot = ƒ(TS) BF998W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mA 220 Ptot Output characteristics ID = ƒ(VDS) VG2S = 4 V VG1S = Parameter 0 2 4 6 8 10 V 14 VDS mA ID 0.4V 0.2V -0.2V -0.4V Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 0 4 8 12 16 mA 24 ID mS gfs

BF998... Gate 1 forward transconductance gfs1 = ƒ (VG1S) VG1S mS Gfs Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S mA ID Power gain Gps = ƒ (VG2S) f = 45 MHz 0 1 2 V 4 VG2S dB Gps Noise figure F = ƒ (VG2S) f = 45 MHz 0 1 2 V 4 VG2S dB F

BF998... Power gain Gps = ƒ (VG2S) f = 800 MHz 0 1 2 V 4 VG2S -10 dB Gps Power gain Gps = ƒ (VG2S) f = 800 MHz 0 1 2 V 4 VG2S -10 dB Gps Gate 1 input capacitance Cg1ss = ƒ (VG1S) VG1S 1.2 1.4 1.6 1.8 2.2 pF 2.6 Cg1ss Output capacitance Cdss = ƒ(VDS) 0 2 4 6 8 V 12 VDS 0.5 1.5 2.5 pF Cdss