BF997 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07 April 1991 DISCRETE SEMICONDUCTORS BF997 N-channel dual-gate MOS-FET

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997

FEATURES

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source
  • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz.

APPLICATIONS

  • UHF and VHF applications such as: – UHF/VHF television tuners – Professional communication equipment
  • Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT143) and symbol. Marking code: MKp. handbook, halfpage s,b d Top view MAM039

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DS drain-source voltage − 20 V ID drain current − 30 mA Ptot total power dissipation up to Tamb =6 0°C − 200 mW Tj junction temperature − 150 °C transfer admittance f = 1 kHz; ID = 10 mA; VDS =1 5V ; VG2-S =4V 1 8 − mS C ig1-s input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2.5 − pF C rs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S =4V 2 5 − fF F noise figure f = 200 MHz; G S = 2 mS; BS =B Sopt; ID = 10 mA; VDS =1 5V ; VG2-S =4V 1 − dB Y fs

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 30 mA ID(AV) average drain current − 30 mA IG1-S gate 1-source current −± 10 mA IG2-S gate 2-source current −± 10 mA Ptot total power dissipation up to T amb =6 0°C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 200 100 200 MGE792

100 Tamb (°C)

(mW) THERMAL CHARACTERISTICS Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8× 10 × 0.7 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note 1 460 K/W

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 STATIC CHARACTERISTICS Tj=2 5°C unless otherwise specified. DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS =1 5V ; VG2-S =4V ; Tamb =2 5°C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IG1-SS gate 1 cut-off current V G1-S = ±5 V; VG2-S =V DS =0 −± 50 nA IG2-SS gate 2 cut-off current V G2-S = ±5 V; VG1-S =V DS =0 −± 50 nA V(BR)G1-SS gate 1-source breakdown voltage IG1-SS = ±10 mA; VG2-S =V DS =0 ±6 ±20 V V(BR)G2-SS gate 2-source breakdown voltage IG2-SS = ±10 mA; VG1-S =V DS =0 ±6 ±20 V V(P)G1-S gate 1-source cut-off voltage ID =2 0µA; VDS = 15 V; VG2-S =4V −− 2.5 V V(P)G2-S gate 2-source cut-off voltage ID =2 0µA; VDS = 15 V; VG1-S =0 −− 2V IDSS drain-source cut-off voltage V DS =1 5V ; VG2-S =4V ; VG1-S =0 2 2 0 m A SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT transfer admittance f = 1 kHz 15 18 mS C ig1-s input capacitance at gate 1 f = 1 MHz − 2.5 pF C ig2-s input capacitance at gate 2 f = 1 MHz − 1.2 pF C rs feedback capacitance f = 1 MHz − 25 fF C os output capacitance f = 1 MHz − 1p F F noise figure f = 200 MHz; G S = 2 mS; BS =B Sopt − 1d B G p power gain f = 200 MHz; G S = 2 mS; BS =B Sopt; G L = 0.5 mS; BL =B Lopt − 25 dB Y fs

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.3 SOT143. Dimensions in mm. See alsoSoldering recommendations. handbook, full pagewidth MBC845 max o max o max o 1.1 max 0.75 0.60 0.150 0.090 0.1 max M0.1 AB0 0.10.48 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 ABA B 1.9 0.10.88 1.7