BF996S TEMIC | Alldatasheet

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/C0068Integrated gate protection diodes /C0068Low noise figure /C0068Low feedback capacitance /C0068High cross modulation performance /C0068Low input capacitance /C0068High AGC-range 94 9279 BF996S Marking: MH Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute Maximum Ratings Parameters Symbol Value Unit Drain source voltage V DS 20 V Drain current ID 30 mA Gate 1/gate 2-source peak current ±IG1/G2SM 10 mA Total power dissipation Tamb ≤ 60°C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg –65 to +150 °C Maximum Thermal Resistance Parameters Symbol Value Unit Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 /C0109m Cu R thChA 450 K/W

Rev. A1, 17-Apr-96 2 (5) Electrical DC Characteristics Tamb = 25°C Parameters / Test Conditions Type Symbol Min. Typ. Max. Unit Drain-source breakdown voltage ID = 10 /C0109A, –VG1S = –VG2S = 4 V V (BR)DS 20 V Gate 1-source breakdown voltage ±IG1S = 10 mA, VG2S = VDS = 0 ±V (BR)G1SS 8 14 V Gate 2-source breakdown voltage ±IG2S = 10 mA, VG1S = VDS = 0 ±V (BR)G2SS 8 14 V Gate 1-source leakage current ±V G1S = 5 V , VG2S = VDS = 0 ±IG1SS 50 nA Gate 2-source leakage current ±V G2S = 5 V , VG1S = VDS = 0 ±IG2SS 50 nA Drain current V DS = 15 V , VG1S = 0, VG2S = 4 V BF 996 S BF 996 SA BF 996 SB IDSS IDSS IDSS 9.5 10.5 mA mA mA Gate 1-source cut-off voltage V DS = 15 V , VG2S = 4 V , ID = 20 /C0109A –V G1S(OFF) 2.5 V Gate 2-source cut-off voltage V DS = 15 V , VG1S = 0, ID = 20 /C0109A –V G2S(OFF) 2.0 V Electrical AC Characteristics V DS = 15 V , ID = 10 mA, VG2S = 4 V , f = 1 MHz, Tamb = 25°C Parameters / Test Conditions Type Symbol Min. Typ. Max. Unit Forward transadmittance y21s 15 18.5 mS Gate 1 input capacitance C issg1 2.2 2.6 pF Gate 2 input capacitance V G1S = 0, VG2S = 4 V C issg2 1.1 pF Feedback capacitance C rss 25 35 fF Output capacitance C oss 10.8 1.2 pF Power gain V DS = 15 V , ID = 10 mA, VG2S = 4 V , gS = 2 mS, gL = 0.5 mS, f = 200 MHz gS = 3.3 mS, gL = 1 mS, f = 800 MHz G ps G ps dB dB AGC range V DS = 15 V , VG2S = 4 to –2 V , f = 800 MHz ΔG ps 40 dB Noise figure V DS = 15 V , ID = 10 mA, VG2S = 4 V , gS = 2 mS, f = 200 MHz gS = 3.3 mS, f = 800 MHz F F 1.0 1.8 dB dB

Rev. A1, 17-Apr-96 3 (5) Common Source S-Parameters V DS = 15 V , VG2S = 4 V , ID = 5 mA, Z0 = 50 /C0087 S11 S21 S12 S22 V DS /V ID /mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0.99 0.98 0.95 0.92 0.89 0.86 0.83 0.80 0.78 0.75 0.72 0.70 0.68 –8.5 –17.7 –24.6 –32.1 –39.2 –45.8 –52.3 –58.7 –64.7 –70.7 –76.6 –82.5 –88.6 1.45 1.52 1.33 1.26 1.18 1.11 1.05 0.99 0.93 0.88 0.84 0.80 0.76 164.9 150.9 134.7 121.3 108.4 96.5 85.0 74.1 63.6 53.1 43.7 33.6 24.1 0.001 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.006 82.2 75.6 67.7 62.8 57.8 57.3 58.9 63.3 73.1 83.5 102.1 120.4 131.7 0.99 0.98 0.97 0.95 0.93 0.92 0.90 0.88 0.86 0.85 0.83 0.82 0.80 –3.4 –7.1 –9.7 –12.3 –15.1 –17.4 –19.7 –22.0 –24.3 –26.2 –28.4 –30.5 –32.7 15 10 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0.99 0.98 0.95 0.92 0.88 0.85 0.82 0.79 0.76 0.73 0.71 0.68 0.66 –9.0 –18.7 –26.0 –33.7 –41.2 –48.3 –55.1 –61.6 –67.9 –74.2 –80.2 –86.4 –92.3 1.82 1.90 1.67 1.58 1.48 1.39 1.32 1.24 1.17 1.11 1.06 1.01 0.97 165.3 151.8 136.3 123.3 110.9 99.5 88.7 78.1 67.9 57.9 48.7 38.9 29.6 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.006 81.9 75.0 67.2 61.8 56.3 55.8 56.7 60.7 69.9 80.0 98.9 118.2 130.5 0.99 0.98 0.96 0.95 0.93 0.91 0.90 0.88 0.86 0.84 0.83 0.81 0.80 –3.5 –7.2 –9.8 –12.6 –15.3 –17.8 –20.0 –22.4 –24.6 –26.6 –28.8 –31.0 –33.3 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0.99 0.98 0.94 0.91 0.87 0.84 0.81 0.78 0.75 0.72 0.69 0.67 0.65 –9.4 –19.4 –27.1 –35.0 –42.9 –50.3 –57.2 –63.9 –70.4 –76.8 –82.9 –89.0 –95.1 2.01 2.10 1.84 1.74 1.63 1.53 1.45 1.37 1.29 1.22 1.17 1.12 1.07 165.4 152.0 136.7 123.8 111.5 100.3 89.6 79.4 69.2 59.4 50.2 40.8 31.5 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.006 81.4 74.6 66.4 60.8 55.1 54.4 54.9 58.5 67.3 76.7 95.2 115.3 128.7 0.98 0.97 0.96 0.94 0.92 0.91 0.89 0.87 0.86 0.84 0.83 0.81 0.79 –3.6 –7.3 –10.0 –12.9 –15.7 –18.0 –20.4 –22.7 –25.0 –27.1 –29.4 –31.6 –33.9

Rev. A1, 17-Apr-96 4 (5) Dimensions in mm 96 12240

Rev. A1, 17-Apr-96 5 (5) Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423