BF996S

BF996S SIEMENS | Alldatasheet

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Technical content

Silicon N Channel MOSFET Tetrode BF 996 S l For input stages in UHF TV tuners l High transconductance l Low noise figure Maximum Ratings Type Marking Package 1)Pin Configuration BF 996 S Q62702-F1021MH SOT-143 1 2 3 4 S D G 2 G 1 Ordering Code (tape and reel) Parameter Symbol Values Unit Drain-source voltage VDS 20 V Thermal Resistance Junction - soldering point Rth JS < 370 K/W Total power dissipation,TA < 76 ˚C Ptot 200 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate 1/gate 2 peak source current – IG1/2SM 10 Channel temperature Tch 150 mADrain current ID 30 1) For detailed information see chapter Package Outlines. 07.94

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. DC Characteristics VDrain-source breakdown voltage ID = 10mA, –VG1S = –VG2S = 4 V V(BR) DS 20 – – nAGate 1 source leakage current – VG1S = 5 V,VG2S =VDS = 0 – IG1SS ––5 0 Gate 2 source leakage current – VG2S = 5 V,VG1S =VDS = 0 – IG2SS ––5 0 Gate 1 source breakdown voltage – IG1S = 10 mA,VG2S =VDS = 0 – V(BR) G1SS 8.5 – 14 Gate 2 source breakdown voltage – IG2S = 10 mA,VG1S =VDS = 0 – V(BR) G2SS 8.5 – 14 VGate 1 source pinch-off voltage VDS = 15 V,VG2S = 4 V,ID = 20mA – VG1S (p) – – 2.5 Gate 2 source pinch-off voltage VDS = 15 V,VG1S = 0,ID = 20mA – VG2S (p) – – 2.0 mADrain current VDS = 15 V,VG1S = 0,VG2S = 4 V IDSS 2–2 0 UnitValuesParameter Symbol min. typ. max.

atTA = 25 ˚C, unless otherwise specified. AC Characteristics UnitValuesParameter Symbol min. typ. max. Gain control range VDS = 15 V,VG2S = 4 … – 2 V,f = 800 MHz (test circuit 2) D G ps 40 – – mSForward transconductance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 kHz gfs 15 18 – Gate 2 input capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C g2ss – 1.1 – pFOutput capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C dss – 0.8 – Noise figure VDS = 15 V,ID = 10 mA f = 200 MHz,G G = 2 mS,G L = 0.5 mS (test circuit 1) F –1– pFGate 1 input capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C g1ss – 2.3 – fFFeedback capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C dg1 –2 5 – dBPower gain VDS = 15 V,ID = 10 mA f = 200 MHz,G G = 2 mS,G L = 0.5 mS (test circuit 1) G ps –2 5 – Power gain VDS = 15 V,ID = 10 mA f = 800 MHz,G G = 2.5 mS,G L = 0.8 mS (test circuit 2) G ps –1 8 – Noise figure VDS = 15 V,ID = 10 mA f = 800 MHz,G G = 2.5 mS,G L = 0.8 mS (test circuit 2) F – 1.8 –

Total power dissipationPtot =f (TA ) Gate 1 forward transconductance gfs1 =f (V G1S ) VDS = 15 V,IDSS = 10 mA,f = 1 kHz Output characteristicsID =f (V DS ) VG2S = 4 V Gate 1 forward transconductance gfs1 =f (V G2S ) VDS = 15 V,IDSS = 10 mA,f = 1 kHz

Drain currentID =f (V G1S ) VDS = 15 V Gate 2 input capacitanceC g 2ss =f (V G2S ) VG1S = 0 V,VDS = 15 V IDSS = 10 mA,f = 1 MHz Gate 1 input capacitanceC g1ss =f (V G1S ) VG2S = 4 V,VDS = 15 V IDSS = 10 mA,f = 1 MHz Output capacitanceC dss =f (V DS ) VG1S = 0 V,VG2S = 4 V IDSS = 10 mA,f = 1 MHz

Power gainG ps =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 200 MHz (see test circuit 1) Power gainG ps =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 800 MHz (see test circuit 2) Noise figureF =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 200 MHz (see test circuit 1) Noise figureF =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 800 MHz (see test circuit 2)

Gate 1 input admittancey11s VDS = 15 V,VG2S = 4 V (common source) Output admittancey22s VDS = 15 V,VG2S = 4 V (common source) Gate 1 forward transfer admittancey21s VDS = 15 V,VG2S = 4 V (common source)

Test circuit 1 for power gain and noise figure f = 200 MHz,G G = 2 mS,G L = 0.5 mS Test circuit 2 for power gain, noise figure and cross modulation f = 800 MHz,G G = 2.5 mS,G L = 0.8 mS