BF995 SIEMENS | Alldatasheet
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Technical content
Silicon N Channel MOSFET Tetrode BF 995 l For input and mixer stages in FM and VHF TV tuners Maximum Ratings Type Marking Package 1)Pin Configuration BF 995 Q62702-F936MB SOT-143 1 2 3 4 S D G 2 G 1 Ordering Code (tape and reel) Parameter Symbol Values Unit Drain-source voltage VDS 20 V Thermal Resistance Junction - soldering point Rth JS < 370 K/W Total power dissipation,TS < 76 ˚C Ptot 200 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate 1/gate 2 peak source current – IG1/2SM 10 Channel temperature Tch 150 mADrain current ID 30 1) For detailed information see chapter Package Outlines. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. DC Characteristics VDrain-source breakdown voltage ID = 10mA, –VG1S = –VG2S = 4 V V(BR) DS 20 – – nAGate 1 source leakage current – VG1S = 5 V,VG2S =VDS = 0 – IG1SS ––5 0 Gate 2 source leakage current – VG2S = 5 V,VG1S =VDS = 0 – IG2SS ––5 0 Gate 1 source breakdown voltage – IG1S = 10 mA,VG2S =VDS = 0 – V(BR) G1SS 8.5 – 14 Gate 2 source breakdown voltage – IG2S = 10 mA,VG1S =VDS = 0 – V(BR) G2SS 8.5 – 14 VGate 1 source pinch-off voltage VDS = 15 V,VG2S = 4 V,ID = 20mA – VG1S (p) – – 2.5 Gate 2 source pinch-off voltage VDS = 15 V,VG1S = 0,ID = 20mA – VG2S (p) – – 2.0 mADrain current VDS = 15 V,VG1S = 0,VG2S = 4 V IDSS 4–2 0 UnitValuesParameter Symbol min. typ. max.
atTA = 25 ˚C, unless otherwise specified. AC Characteristics UnitValuesParameter Symbol min. typ. max. Gain control range VDS = 15 V,VG2S = 4 … – 2 V,f = 200 MHz (see test circuit 1) D G ps –5 0 – mSForward transconductance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 kHz gfs 12 17 – Gate 2 input capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C g2ss – 1.6 – pFOutput capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C dss – 1.6 – Noise figure VDS = 15 V,ID = 10 mA f = 200 MHz,G G = 2 mS,G L = 0.5 mS (see test circuit 1) F – 1.1 – pFGate 1 input capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C g1ss – 3.6 – fFFeedback capacitance VDS = 15 V,ID = 10 mA,VG2S = 4 V,f = 1 MHz C dg1 –2 5 – dBPower gain VDS = 15 V,ID = 10 mA f = 200 MHz,G G = 2 mS,G L = 0.5 mS
2 Df = 12 MHz
(see test circuit 1) G ps –2 3 – Mixer gain (additive) VDS = 15 V,VG2S = 6 V,RS = 220W f = 200 MHz,fIF = 36 MHz 2 DfIF = 5 MHz,Vosc = 0.5 V (see test circuit 2) G psc –1 6 – Mixer gain (multiplicative) VDS = 15 V,VG1S = 1.7 V,VG2S = 2.5 V RS = 220W ,f = 200 MHz,fIF = 36 MHz
2 DfIF = 5 MHz,Vosc = 2 V
(see test circuit 3) G psc –1 8 –
Total power dissipationPtot =f (TA ) Gate 1 forward transconductance gfs1 =f (V G1S ) VDS = 15 V,IDSS = 10 mA,f = 1 kHz Output characteristicsID =f (V DS ) VG2S = 4 V Gate 1 forward transconductance gfs1 =f (V G2S ) VDS = 15 V,IDSS = 10 mA,f = 1 kHz
Drain currentID =f (V G1S ) VDS = 15 V Gate 2 input capacitanceC g 2ss =f (V G2S ) VG1S = 0 V,VDS = 15 V IDSS = 10 mA,f = 1 MHz Gate 1 input capacitanceC g1ss =f (V G1S ) VG2S = 4 V,VDS = 15 V IDSS = 10 mA,f = 1 MHz Output capacitanceC dss =f (V DS ) VG1S = 0 V,VG2S = 4 V IDSS = 10 mA,f = 1 MHz
Gate 1 input admittancey11s VDS = 15 V,VG2S = 4 V (common source) Output admittancey22s VDS = 15 V,VG2S = 4 V (common source) Gate 1 forward transfer admittancey21s VDS = 15 V,VG2S = 4 V (common source)
Power gainG ps =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 200 MHz (see test circuit 1) Interference voltage for 1% cross modulationV int (1%) =f (DG ps)1) VDS = 15 V,VG1S = 0,f = 200 MHz f int = 221 MHz (see test circuit 1) Noise figureF =f (V G2S ) VDS = 15 V,VG1S = 0 V,IDSS = 10 mA f = 200 MHz (see test circuit 1) Interference voltage for 1% cross modulationV int (1%) =f (fint)1) VDS = 15 V,VG2S = 4 V,VG1S = 0 f = 200 MHz (see test circuit 1) 1) For footnote refer to the last page of this data sheet.
Mixer gain (additive)G psc =f (V osc) VD = 15 V,VG1S = 0,VG2S = 6 V RS = 220W ,IDSS = 10 mA,f = 200 MHz f IF = 36 MHz (see test circuit 2) Mixer gain (additive)G psc =f (R S) VD = 15 V,VG1S = 0,VG2S = 6 V Vosc = 0.5 V,f = 200 MHz fIF = 36 MHz (see test circuit 2) Mixer gain (additive)G psc =f (V G2S ) VD = 15 V,VG1S = 0,RS = 220W Vosc = 0.5 V,IDSS = 10 mA,f = 200 MHz f IF = 36 MHz (see test circuit 2) Mixer gain (multiplicative)G psc =f (V G2S ) VD = 15 V,VG1S = 1.7 V,RS = 200W IDSS = 10 mA,f = 200 MHz fIF = 36 MHz (see test circuit 3)
Test circuit 1 for power gain, noise figure and cross modulation f = 200 MHz,G G = 2 mS,G L = 0.5 mS Test circuit 2 for mixer gain (additive) f = 200 MHz,fosc = 236 MHz, 2DfIF = 5 MHz
Test circuit 3 for mixer gain (multiplicative) f = 200 MHz,fosc = 236 MHz, 2DfIF = 5 MHz 1) Vint (1%) is the rms value of half the emf (terminal voltage at matching) of a 100 % sine modulated TV carrier at an internal generator resistance of 60W , causing 1 % amplitude modulation on the active carrier.