BF987 SIEMENS | Alldatasheet
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Technical content
Silicon N Channel MOSFET Triode BF 987 l For high-frequency stages up to 300 MHz, preferably in FM applications l High overload capability Maximum Ratings Type Marking Package 1)Pin Configuration BF 987 Q62702-F35– TO-92 1 2 3 D S G Ordering Code Parameter Symbol Values Unit Drain-source voltage VDS 20 V Thermal Resistance Junction - ambient Rth JA £ 350 K/W Total power dissipation,TA £ 45 ˚C Ptot 300 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate-source peak current – IGSM 10 Channel temperature Tch 150 mADrain current ID 30 1) For detailed information see chapter Package Outlines.
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VDrain-source breakdown voltage ID = 10mA, –VGS = 4 V V(BR) DS 20 – – nAGate-source leakage current – VGS = 5 V,VDS = 0 – IGSS ––5 0 Gate-source breakdown voltage – IGS = 10 mA,VDS = 0 – V(BR) GSS 6.5 – 12 VGate-source pinch-off voltage VDS = 10 V,ID = 20mA – VGS (p) – – 2.5 mADrain current VDS = 10 V,VGS = 0 IDSS 5–1 8 mSForward transconductance VDS = 10 V,ID = 10 mA,f = 1 kHz gfs 14 16 – pFOutput capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C dss –1– Noise figure (test circuit) VDS = 10 V,ID = 10 mA ,f = 200 MHz, G G = 2 mS,G L = 0.5 mS F –1– pFGate input capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C gss – 2.7 – fFReverse transfer capacitance VDS = 10 V,ID = 10 mA,f = 1 MHz C dg –3 5 – dBPower gain (test circuit) VDS = 10 V,ID = 10 mA ,f = 200 MHz, G G = 2 mS,G L = 0.5 mS G p –2 5 – BF 987
Total power dissipationPtot =f (TA ) Gate transconductancegfs =f (V GS ) VDS = 10 V,IDSS = 10 mA,f = 1 kHz BF 987 Output characteristicsID =f (V DS ) Drain currentID =f (V GS ) VDS = 10 V
Gate input capacitanceC gs s =f (V GS ) VDS = 10 V,IDSS = 10 mA,f = 1 MHz Reverse transfer capacitanceC dg =f (V DS ) IDSS = 10 mA,f = 1 MHz,VGS = 0 Output capacitanceC dss =f (V DS ) VGS = 0,IDSS = 10 mA,f = 1 MHz Gate input admittancey11s VDS = 10 V,IDSS = 10 mA,VG = 0 (common source) BF 987
Gate forward transfer admittancey21s VDS = 10 V,VG = 0,IDSS = 10 mA (common source) Output admittancey22s VDS = 10 V,IDSS = 10 mA,VG = 0 (common source) BF 987 Test circuit for power gain and noise figure f = 200 MHz