BF979S SIEMENS | Alldatasheet
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al - - . Oe . ese Dd = 4235605 gooysay 4 MB SIEG TSI /F PNP Silicon Planar Transistor BF979S SIEMENS AKTIENGESELLSCHAF 3C 04584 = 9 ________ BF 979 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 (50 8 3 DIN 41867). The transistor is particularly suitable for use in uncontrolled UHF and VHF input stages featuring low cross modulation. . . 8. i : Type Ordering code 5 0 : BF 979S 062702-F610 Ea tet i NAT, i 2 ih : . 0902 son 3 Approx. weight 0.26 g Dimensions in mm : i Maximum ratings Collector-emitter voltage Veco 25 v Collector-base voltage —Vees 30 v Emitter-base voltage ~Veso 3 v Collector current Ig 50 mA Junction temperature q 150 Ne) Storage temperature range Tstg -50to+150 | °C Total power dissipation Prot 160 mw . Thermal resistance Junction to ambient air Rina «| <600 | Kw 630 : 1992 B-13 . .
=r — Bo oe ee a 7 — . @5— D m@ 8235605 OO04S8S O mm SIEG ? 73) AE , . ~_ 25C 04585 DO BF979S. | Static characteristics (Tams = 25°C) : Collector cutoff current : i (-Veso = 20 V) ~Ieeo <100 nA | DC power gain (-Ig = 10 mA; -Veg = 10 V) hee >20 - i Dynamic characteristics (Tam = 25°C) 3 Transistion frequency “ (Ig = 10 mA; -Vog = 10 V; f = 100 MHz) f 1.6 GHz i Reverse transfer capacitance ‘ ("Vee = 1.V; f = 1 MHz) Crab 90 fF : Collector-base capacitance : (-Veg = 10 V;f = 1 MHz) Ceo 0.65 pF i Noise figure i (-Ic = 10 mA; ~Veg = 10 V; fy = 200 MHz; i Rg = 60.) NE 3 B - Noise figure 3 (-Ig = 10 mA; ~Veg = 10 V; fy = 800 MHz; H Rg = 60 Q) NF <46 dB 3 Power gain 4 (I = 10 mA; -Veg = 10 V; fy = 800 MHz; : i R, = 5000) @pb 16.5 4B : Interference voltage"! (Ic = 10 mA; -Vog = 10 V; fy = 200 MHz; : Rg = 75.0) Vine 1% 230 mv Collector current for Gpbmax (-Vea = 10 V; . fy = 800 MHz; A, = 600 2) Ig >10 mA 1) Vint 1% is the rms value of half the EMF of a 100% sine modulated TV carrier with Rg = 76 Q, which causes 1% AM on the useful carrier. twee. 631