BF967 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
23 D MM 4235605 GOO4S7S 3 MM SIEG © T= 3/-75-
PNP Silicon Planar Transistor BF 967 SIEMENS AKTIENGESELLSCHAF ___ : for input stages up to 900 MHz BF 967 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance . plastic package similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable . for use in low noise, gain-controlled input stages up to 900 MHz in tuners with diode . tuning. : i 05 46.03 aaa j Type Ordering code 7 te | BF 967 Q62702-F503 a OO crac } 3 ff 1 : FN pa ca2 sas = ' Approx. weight 0.26 g Dimensions inmm } H Maximum ratings i Collector-emitter voltage Veco 30 v : Collector-base voltage -Vexo (| 30 v 2 Emitter-base voltage —Veso 3 Vv t Collector current Ie 20 mA i Base current -I 5 mA Junction temperature ui 150 °C Storage temperature range Teg ~85 to +150 °c : Total power dissipation Prot 160 mw . Thermal resistance . Junction to ambient air Rina | 600 | Kw i i 624 .
1986 B-07
sy ; - _ — a 2SE D MM 8235405 0004579 S MM SIEG . T. BS ° MEN ENGESELLSCHAF 2© 04579 OD? : SIEMENS AKTIENGESELLSCHAF 8 BFo67 Static characteristics (Temp = 25°C) t Collector cutoff current ! (-Vego = 15 V) -Icso 1(<100) nA : DC current gain i (-Vog = 10 V; Ie = 1 mA) hee 60 (>15) - : Emitter cutoff current (Ic = 0; -Vep = 1 V) -leso <100 nA : Dynamic characteristics (Tam = 25°C) 8 Transition frequency (Hie = 3 mA; —Vee = 10 V; f = 100 MHz) fr 950 MHz Reverse transfer capacitance (-Voe = 1 V; f= 1 MHz) Crap 80 fF Collector-base capacitance (-Veg = 10; f = 1 MHz) -Ceao | 0.42 pF Power gain (-Io = 3 MA; —Veg = 10 V; f = 800 MHz; : Ry = 500 Q) Gob 13 dB ; Noise figure 3 (-Ic = 3 mA; -Vog = 10 V; f= 800 MHz; : Rg = 60 Q) NF 4 dB