BF959 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
NPN Silicon RF Transistor BF 959
- For SAW filter driver applications in TV tuners
- For linear broadband VHF amplifier stages
- For oscillator applications Maximum Ratings Type Marking Package 1)Pin Configuration BF 959 Q62702-F640– TO-92 1 2 3 C E B Ordering Code Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 30 Emitter-base voltage VEB0 3 Thermal Resistance Junction - ambient Rth JA ≤ 250 K/W Total power dissipation,TA ≤ 25 ˚C VCE ≤ 15 V Ptot 500 mW Storage temperature range Tstg – 55 … + 150 Peak base current IBM 30 Junction temperature Tj 150 ˚C mA Collector-emitter reverse voltage VCES 30 Peak collector current ICM 100 1) For detailed information see chapter Package Outlines.
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VCollector-emitter breakdown voltage IC = 1 mA V(BR) CE0 20 – – nACollector cutoff current V = 20 V ICB0 – – 100 –DC current gain,VCE = 10 V IC = 5 mA IC = 20 mA hFE Collector-base breakdown voltage I C = 10µA V(BR) CB0 30 – – Emitter-base breakdown voltage IE = 10µA V(BR) EB0 3–– Collector-emitter saturation voltage IC = 30 mA,IB = 2 mA VCE sat ––1 Base-emitter saturation voltage IC = 30 mA,IB = 2 mA VBE sat – – 0.95 VBase-emitter voltage IC = 20 mA,VCE = 10 V VBE – 0.75 – MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 100 MHz IC = 30 mA,VCE = 5 V fT 700 600 1100 pFOutput capacitance VCB = 10 V,IE = 0,f = 1 MHz C obo – 0.9 – Collector-base capacitance VCE = 10 V,VBE = 0,f = 1 MHz C cb – 0.75 – mSOutput conductance IC = 20 mA,VCE = 10 V ,f = 35 MHz g22e – 0.06 – dBNoise figure VCE = 10 V , f = 200 MHz,RS = 60Ω IC = 5 mA IC = 20 mA F
Total power dissipationPtot =f (TA ) Collector-base capacitanceC cb =f (V CB ) f = 1 MHz Transition frequencyfT =f (IC ) f = 100 MHz