BF939 SIEMENS | Alldatasheet
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ul en —— 25C D MM 8235605 OOO4SSL 4 MMSIEG © T~-3/-/7 PNP Silicon Planar Transistor BF 939 BF 939 is a PNP silicon RF planar transistor in TO 92 plastic package (DIN 41868). The transistor is particularly suitable for controllable VHF input stages in TV tuners. . Type Ordering code 25max EBC H BF939 | 062702-F 528 ous " | a 13581 46 9 46:02] | ‘Approx. weight 0.25 g Dimensions in mm : Maximum ratings Collector-emitter voltage ~Veeo 30 v Collector-base voltage ~Veao | -30 v Base-emitter voltage —Veso 3 Vv : Collector current -Ie 20 mA ° : Base current -lg 2 mA Storage temperature range Tatg -56 to +150 °c Junction temperature i 150 ey . Total power dissipation (Tam = 60°C) Prot 350 mw : Thermal rasistance : Juncition to ambient air Rina ‘| <800 1 Kw : H : { i 602 - 1964 6-13 ‘
‘ 25¢ D Mm@ 8235605 OOO4SS? & MMSIEG - —-3I-1'7 25C 04596 v - ao BF 939 ; SIEMENS AKTIENGESELLSCHAF . Static characteristics (Tamp = 25°C) : (Vee = 20V; —Vee = 0) ~Ices <100 nA : DC current gain i (-I¢ = 2 mA; Vee = 10) hee 50 (>30) - t (Ic = 7 mA; -Vee = 5 V) hee (>10) - Dynamic characteristics (Tamb = 25°C) i Transition frequency } (-Ig = 2 mA; —Veg = 10 V; f= 100 MH2) fr 760 MHz i Reverse transfer capacitance t (“Ig = 1 mA; -Vez = 10 V) Ci20 0.63 pF : Noise figure : (Ig = 2 mA; -Vce = 10 V; : f = 200 MHz; Ry = 609) NF 3 4B { Power gain 1 (Ic = 2 mA; Vee = 10 V; f = 200 MHz; i Ry = 1kQ; Ry = 60.0) Gpb 16 4B i Control range of power gain 3 (Voc = 12 V: Ree = 1k; f = 200 MHz; : Ips9mA) Qe >35 aB : Min. interference voltage 1) : (f = 200 MHz; ~I¢ = 2 mA) Vint 1% 12 mv 1) Vint 1% is the rms value of half the EMF of a 100% sine modulated TV carrier with Rg = 76 Q, which causes 1% AM on the useful carrier. 1965 G-14 603 .