BF926 SIEMENS | Alldatasheet
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ee : ~ _25C D MM 6235605 OOO4554 0 MBSIEG - 7=3/-(7 PNP Silicon Planar Transistor BF 926 - -- — 7 i STEMENS AKTIENGESELLSCHAF 04994 9° ! BF 926 is an epitaxial PNP silicon planar transistor in TO 92 plastic package (10 A 3 DIN | 41868). The transistor is intended for use in VHF oscillator stages, in particular for i driving MOS mixer stages. } i Type Ordering code : BF 926 | 062702-F 678 25imax gE ‘ 4x04 =o i ; tt, at.) les lan i Approx. weight 0.25 g Dimensions in mm : Maximum ratings . Collector-emitter voltage Veco | 30 v . Collector-base voltage ~Veao | 40 v : Emitter-base voltage —Yeso | 4 v Collector current Ie 25 mA . Emitter current kg 30 mA 3 Junction temperature Tj 150 °C ‘Storage temperature range Teg -55 to +150 °c Total power dissipation (Tam = 45°C) Prot 300 mw : Thermal resistance Junction to ambient air Rina | <350 lKw - 600 an! - | 1962 G-11
esc) mm 235605 goousss 2 mESIEG re _s 4 . _€20 04555 0 Sh, 1 SIEMENS AKTIENGESELLSCHAF J Static characteristics (Fam = 25°C) i Collector cutoff current . i (Veg = 20V) ~Ieeo <60 nA : Collector-emitter breakdown voltage : (“Ig = 2mA) -Veeo >30 Vv : : Collector-base breakdown voltage . (-Ig = 10 pA) -Veao >40 Vv i Emitter-base breakdown voltage (Ie = 10 pA) —Veso >4 v DC current gain : (-Ig = 1 mA; -Vce = 10 V) hee 80 (>30) - 2 Dynamic characteristics (Tamp = 25°C) Transition frequency (Ie = 5 mA; —Vce = 10 V; f = 100 MHz) f 600 MHz Reverse transfer capacitance (-Vep = 10V; ~Ig = 5 mA; f = 1 MHz) -Ci20 0.6 pF Output capacitance 2 (-Ie = 0; -Vog = 10 V; f= 1 MHz) Coa 08 pF Input capacitance ? (-Vego = 0.15 V; NF= 1 MHz) Ces0 2 pF 601