BF926 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BF926 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f, and u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) Total power dissipation up to Tamb = 45 °C Junction temperature Transition frequency at f = 100 MHz lE = 1 mA;-VcB = 10V Noise figure at f - 200 MHz IE *> 1 mA; -VCB -10V Transducer gain (common base) IE - 3mA; -VCB = 10V MECHANICAL DATA -VCBO -VCEO -ic ptot TJ fr F Gtr max. max. max. max. max. typ. 30 V 20 V 25 mA 250 mW 150 °C
350 MHz
Fig. 1 TO-92. Pinning 1=base 2 = emitter 3 = collector _fc_ i — q diimetef within 2,6 max t f 0.49 max N.I .Semi-t (inductors reserves the right tn change lest conditions, parameter limit* ;md package Jimensiorw \\vitho4il notice Infbrmiition furnished by NJ Scmi-Conducton ii believed to he both accurate and reliable .it the lime of going to press. However SI Scini-t iiiidutlurs .ISMIIIKS ihi respmuibilily for ;my errors i'r umiisHnis Jiscuvcred in its use M Semi-CuiKhkhirs uncourn^ea n-;f( nirrs ti> iLf il\\h it •l:it!i-;hr(-!i ir^ , nrrent hethrc olncirli?
Limiting values In accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) — VCBO Collector-emitter voltage (open base) —VCEO Emitter-base voltage (open collector) — VEBO Collector current (d.c.) -\\Q Total power dissipation up to Tamb = 45 °C Pfot Storage temperature Junction temperature THERMAL RESISTANCE From Junction to ambient in free air CHARACTERISTICS Collector cut-off current lE=0;-VcB-20V Base current IE = 1 mA;-VcB=10V Collector-base breakdown voltage open emitter; — \\Q = 10 p A Collector-emitter breakdown voltage open base; — Ic = 2 mA Emitter-base breakdown voltage open collector; — Ig = 10 /<A Transition frequency at f " 100 MHz IE = 1 mA;~VCB-10V Feedback capacitance at f = 1 MHz Noise figure at f = 200 MHz lE=1mA;-VCB=10V Transducer gain (common base) at f » 200 MHz IE •=• 3 mA; -VCB - 10 V; Rs = 60 ft; RL = 920 « 'stg TJ Rth j-a -ICBO -IB -V(BR)CBO -V(BR)CEO -V(BR)EBO max. max. max. max. max. 30 V 20 V 4 V 25 mA 250 mW -65 to+ 150 °c max. 150 °C
420 K/W
< 50 nA < 33 pA. > 30 V > 20 V > 4V typ. 350 MHz typ. 500 MHz 400 to 700 MHz Cre F Gtr typ. typ. typ. 0,5 pF 5 dB 6 dB 14 dB 17,5 dB