BF847 SIEMENS | Alldatasheet
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25C D MM 8235605 OOONSHL 2 MMSIEG * T3(-2F PNP Silicon RF Transistors BF 847 - BF 848 SIEMENS AKTIENGESELLSCHAF 4! © BF 849 for video and AF output stages BF 847, BF 848, and BF 849 are epitaxial PNP silicon planar transistors in plastic package similar to TO 202. The collector is conductively connected to the metallic mounting area of the transistor. The transistors are especially designed for use in video output stages of 1 TV receivers, for AF output stages of high operating voltage and as driver transistors in horizontal deflection circuits. i i Type Ordering code gh —t —=J > és ss | BF 847 | 062702-F662 8a ON F i BF 848 | Q62702-F663 as 3 i BF 849 Q62702-F664 22902 3, i 3 { a5e03 Et) 13,221 217292 | Approx. weight 15 Dimensions in mm { Available upon request also with bent ° fixing plate. Maximum ratings BF 847 BF 848 BF 849 . . Collector-base voltage Vso 160 270 300 v Collector-emitter voltage ~Vceo 160 250 300 v Emitter-base voltage —Veao 5 5 5 v Collector current wie 100 100 100 mA ~ Base current le 50 50 50 mA Collector peak current alow 300 300 300 mA Junction temperature yj 150 160 160 °C . Storage temperature range Thee 55 to +150 °c Total power dissipation . (Tame S 25°C) Prot 18 18 18 w (Tease $ 100°C) Prot 2.5 26 26 w Thermal resistance . : Junction to ambient air Rina | $70 | $70 | $70 | Kw Junction to case Renac $20 $20 $20 Kw 1949 Fe12 .
/25C D MM 8235605 OOO4SH2 4 MMSIEG -—7—3/ -AZ SIEMENS AKTIENGESELLSCHAF 9*942. 0 BF 847 BF 848 a TAB BA, Static characteristics (Tamp = 25°C) Br847 | ere4s | BFs49 Collector-base breakdown voltage (/c = 100 uA) ~Viericao | <160 <250 <300 Vv . Collector-emitter breakdown voltage Uc = 10 mA) Viericzo | <160 <260 <300 v Emitter-base breakdown voltage (Ic = 100 yA) -Veeneso | >5 >5 >B v Collector cutoff current (Veg = 100 V) “kao | <80 - - nA . (ep = 200 V) -keo | - <50 - nA : (Veg = 250 V) ~Ieso - - <60 nA : Emitter cutoff current . (Veso = 3 V) ~keo <50 <50 <50 nA Collector-emitter saturation voltage (Ic = 30 mA; Ig = 6 mA) —Veesat <1 <1 <1 v DC current gain {ig = 30 mA; Vee = 10 V) bre >25 >25 >25 - Dynamic characteristics (Tymp = 25°C) ° Transition frequency (Vce = 10 V; . Ig = 16 mA; f = 20 MHz) fr 90 90 90 MHz Reverse transfer capacitance (Vce = 30 V; f = 1 MHz; Ig =1mA) “Ci26 42 42 42 pF Output capacitance (Veg = 30V; f=1MHz;le=0) Caz 65 55 55 pF i ae | - {1950 F=13 ; |
en - Cee : 25C D MM B235L05 OOO4SU3 &b MESIEG ——7-F/-22 \\ SIEMENS AKTIENGESELLSCHAF © ren | in = BE BAS | * t | COC f HNN NT ii i saareastt ait Ne PSH COMET LETT TN TTT NY oll CECECCECEEE NC Ecc eis tein : COCCEECELELENAN Cn ; LECT Tr @ UUM t) 50 100 150°C. w 10! ~ 10? wv Fa —_—.T oe . Permissible pulse load Fae = tie . 2m FRESE HEEH EEE : ra iaaitnintiitianiit 1 cy a NAL eevee MU Beer IL . ee iiieati faa Collector current Ic = f (Vac) . rail HH Output characteristics Ic = f (Vce) cre Base currant Je ene ane ) ransition frequency fr = «UT - A similar to those of BF 857, 858, 859 10% 105 10% 10? 107 107 10° 0's er : ‘ 589