BF840 SIEMENS | Alldatasheet
Document overview
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Technical content
NPN Silicon RF Transistors BF 840 BF 841
- Suitable for common emitter RF, IF amplifiers
- Low collector-base capacitance due to contact shield diffusion
- Low output conductance Maximum Ratings Type Ordering CodeMarking Package 1)Pin Configuration BF 840 Q62702-F1240NC SOT-23 1 2 3 B E C BF 841 Q62702-F1287ND Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Thermal Resistance Junction - ambient2) Rth JA ≤ 450 K/W Total power dissipation,TA ≤ 25 ˚C2) Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Base current IB 2 Junction temperature Tj 150 ˚C Collector current IC 25 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR) CE0 40 – – nACollector-base cutoff current VCB = 20 V,IE = 0 ICB0 – – 100 –DC current gain,IC = 1 mA,VCE = 10 V BF 840 BF 841 h FE 220 125 Emitter-base breakdown voltage IE = 10µA,IB = 0 V(BR) EB0 4–– VBase-emitter voltage IC = 1 mA,VCE = 10 V VBE – 0.7 – µSOutput conductance IC = 1 mA,VCE = 10 V ,f = 0.5 MHz g22e –4– dBNoise figure IC = 1 mA,VCE = 10 V ,f = 100 kHz RS = 200Ω F – 1.7 – MHzTransition frequency IC = 1 mA,VCE = 10 V,f = 100 MHz fT – 380 – pFCollector-base capacitance VCB = 10 V,VBE =vbe = 0,f = 1 MHz C cb – 0.3 –