BF823

BF821 GE | Alldatasheet

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FEATURES

Small Signal Transistors (PNP) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. SOT -23 PNP Silicon Epitaxial Planar T ransistors especially suited for application in class- B video output stages of TV receivers and monitors. As complementary types, the NPN tran- sistors BF820 and BF822 are recommended. Symbol Value Unit Collector-Base Voltage BF821 BF823 –VCBO –VCBO 300 250 V V Collector-Emitter Voltage BF823 –VCEO 250 V Collector-Emitter Voltage BF821 –VCER 300 V Emitter-Base Voltage –V EBO 5V Collector Current –I C 50 mA Peak Collector Current –I CM 100 mA Power Dissipation at TSB = 50 °C P tot 3001) mW Junction T emperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Marking code BF821 = 1W BF823 = 1Y BF821, BF823

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Collector-Base Breakdown VoltageBF821 at –IC = 100 µA, IE = 0 BF823 –V(BR)CBO –V(BR)CBO 300 250 V V Collector-Emitter Breakdown VoltageBF823 at –IC = 10 mA, IB = 0 –V(BR)CEO 250 – – V Collector-Emitter Breakdown VoltageBF821 at RBE = 2.7 kΩ , –IC = 10 mA –V(BR)CER 300 – – V Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 –V(BR)EBO 5––V Collector-Base Cutoff Current at –VCB = 200 V , IE = 0 –ICBO ––1 0 n A Collector-Emitter Cutoff Current at RBE = 2.7 kΩ , –VCE = 250 V at RBE = 2.7 kΩ , –VCE = 200 V , Tj = 150 °C –ICER –ICER nA µA Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA –VCEsat ––0 . 8 V DC Current Gain at –VCE = 20 V , –IC = 25 mA hFE 50 – – – Gain-Bandwidth Product at –VCE = 10 V , –IC = 10 mA fT 60 – – MHz Feedback Capacitance at –VCE = 30 V , –IC = 0, f = 1 MHz C re ––1 . 6 p F Thermal Resistance Junction to Ambient AirRthJA – – 430 1) K/W 1) Device on fiberglass substrate, see layout BF821, BF823 Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)