BF822

BF820 GE | Alldatasheet

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FEATURES

Small Signal Transistors (NPN) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. SOT -23 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the PNP tran- sistors BF821 and BF823 are recom- mended. BF820, BF822 Symbol Value Unit Collector-Base Voltage BF820 BF822 VCBO VCBO 300 250 V V Collector-Emitter Voltage BF822 VCEO 250 V Collector-Emitter Voltage BF820 VCER 300 V Emitter-Base Voltage V EBO 5V Collector Current I C 50 mA Peak Collector Current I CM 100 mA Power Dissipation at TSB = 50 °C P tot 3001) mW Junction T emperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout Marking code BF820 = 1V BF822 = 1X

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified BF820, BF822 Symbol Min. T yp. Max. Unit Collector-Base Breakdown VoltageBF820 at IC = 100 µA, IB = 0 BF822 V(BR)CBO V(BR)CBO 300 250 V V Collector-Emitter Breakdown VoltageBF822 at IC = 10 m A, IE = 0 V(BR)CEO 250 – – V Collector-Emitter Breakdown VoltageBF820 at RBE = 2.7 kΩ , IC = 10 m A V(BR)CER 3 0 0 ––V Emitter-Base Breakdown Voltage at IE = 100 µA, IB = 0 V(BR)EBO 5––V Collector-Base Cutoff Current at VCB = 200 V , IE = 0 ICBO ––1 0 n A Collector-Emitter Cutoff Current at RBE = 2.7 kΩ , VCE = 250 V at RBE = 2.7 kΩ , VCE = 200 V , Tj = 150 °C ICER ICER nA µA Collector Saturation Voltage at IC = 30 mA, IB = 5 mA VCEsat ––0 . 6 V DC Current Gain at VCE = 20 V , IC = 25 mA hFE 5 0 ––– Gain-Bandwidth Product at VCE = 10 V , IC = 10 mA fT 6 0 ––M H z Feedback Capacitance at VCE = 30 V , IC = 0, f = 1 MHz C re ––1 . 6 p F Thermal Resistance Junction to Ambient AirRthJA – – 430 1) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)