BF799W

BF799W SIEMENS | Alldatasheet

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Semiconductor Group 1 Nov-28-1996 BF 799W NPN Silicon RF Transistor

• For linear broadband amplifier applications up to 500MHz
• SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration Package BF 799W LKs Q62702-F1571 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 20 V Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 3 Collector current IC 35 mA Base current IB 10 Total power dissipation TS ≤ 107 °C Ptot 280 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... - 150 Thermal Resistance Junction - soldering point R thJS ≤ 155 K/W

Semiconductor Group 2 Nov-28-1996 BF 799W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 20 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 30 - - Base-emitter breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 3 - - Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 nA DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V hFE 100 250 Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA VCEsat - 0.15 0.5 V Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat - - 0.95

Semiconductor Group 3 Nov-28-1996 BF 799W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz fT 1100 800 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0 , f = 1 MHz C cb - 0.7 - pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz C ce - 0.28 - Output capacitance VCB = 10 V, IE = 0 mA, f = 1 MHz C ob - 0.96 - Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 50 Ω F - 3 - dB Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e - 60 - µS

Semiconductor Group 4 Nov-28-1996 BF 799W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 120 140 160 180 200 220 240 260 mW 300 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Nov-28-1996 BF 799W Transition frequency fT = f (IC ) f = 100MHz VCE = Parameter Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz