BF799 SIEMENS | Alldatasheet
Document overview
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Technical content
NPN Silicon RF Transistor BF 799
- For linear broadband amplifier applications up to 500 MHz
- SAW filter driver in TV tuners Maximum Ratings Type Marking Package 1)Pin Configuration BF 799 Q62702-F935LK SOT-23 1 2 3 B E C Ordering Code (tape and reel) Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 30 Emitter-base voltage VEB0 3 Thermal Resistance Junction - ambient2) Rth JA ≤ 450 K/W Total power dissipation,TA ≤ 25 ˚C Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Peak base current IBM 15 Junction temperature Tj 150 ˚C Collector current IC 35 mA Collector-emitter reverse voltage VCES 30 Peak collector current ICM 50 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR) CE0 20 – – nACollector cutoff current VCB = 20 V ICB0 – – 100 –DC current gain,VCE = 10 V IC = 5 mA IC = 20 mA hFE 100 250 Collector-base breakdown voltage IC = 10µA,IE = 0 V(BR) CB0 30 – – Emitter-base breakdown voltage IE = 10µA V(BR) EB0 3–– VCollector-emitter saturation voltage IC = 20 mA,IB = 2 mA VCE sat – 0.15 0.5 Base-emitter saturation voltage IC = 20 mA,IB = 2 mA VBE sat – – 0.95 MHzTransition frequency IC = 5 mA,VCE = 10 V,f = 100 MHz IC = 20 mA,VCE = 8 V,f = 100 MHz fT 800 1100 pFOutput capacitance VCB = 10 V,f = 1 MHz,IE = 0 C ob – 0.96 – Collector-base capacitance VCB = 10 V,VBE = 0 V,f = 1 MHz C cb – 0.7 – µSOutput conductance IC = 20 mA,VCE = 10 V ,f = 35 MHz g22e –6 0 – dBNoise figure IC = 5 mA,VCE = 10 V ,f = 100 MHz RS = 50Ω F –3– Collector-emitter capacitance VCE = 10 V,VBE = 0 V,f = 1 MHz C ce – 0.28 – AC Characteristics
Total power dissipationPtot =f (TA ) Collector-base capacitanceC cb =f (V CB ) f = 1 MHz Transition frequencyfT =f (IC ) f = 100 MHz