BF777 SIEMENS | Alldatasheet

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Technical content

NPN Silicon RF Transistor BF 777 Preliminary Data @ For UHF/VHF frequency converters and local oscillators. @ fr= 2.2GHz Ler VPSO5161 ESD: Electrostatic discharge sensitive device, observe handling precautions! (tape and reel) 1 2 3 Maximum Ratings Parameter Unit Collector-emitter voltage 7 Collector-emitter voltage, Vee = 0 Collector-base voltage Emitter-base voltage Collector current mA Peak collector current, f 2 10 MHz Base current a eee Peak base current, f > 10 MHz a Total power dissipation, Ts < 97 “C9 mw Junction temperature °C Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient? Bo K/W Junction - soldering point? 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm ~ 16.7 mm ~ 0.7 mm. 3) Ts is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics

at Ta = 25 °C, unless otherwise specified. Parameter Symbol Unit [min. [typ max. | DC Characteristics Collector-emitter breakdown voltage Veryceo | 20 Vv Ic=1mMA, Ip =O Collector-emitter cutoff current Ices 1 LA Vce = 15 V, Vee =0 Collector-base cutoff current Iceo Ves = 30 V, le=0 1.0 Vos = 15V, le=0 0.5 Emitter-base cutoff current Teeo 10 Ves =3V, Ic=0 DC current gain re 30 200 - Ic=5 mA, Vee = 10 V Collector-emitter saturation voltage Voesat Vv Ic =10 MA, Iz =5 mA - 0.7 Ic=10 mA, Ie =1mMA 0.1 0.4 AC Characteristics Transition frequency f 1.4 2.2 GHz Ic =5 mA, Vee = 10 V, f = 200 MHz Collector-base capacitance Cob 0.5 0.85 | pF Vee = 10 V, Vee = vee = 0, f= 1 MHZ Collector-emitter capacitance Coo 0.33 Vce = 10 V, Vee = vee = 0, f= 1 MHz

Total power dissipation Prot = f (Ta*; Ts) Transition frequency ft = f (Ic) *Package mounted on alumina Vee = 10 V, f= 200 MHz

200 BF 777 EHTO7961 3 BF 777 EHT07962

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1.0 BF 777 | ] | EHTO7963

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