BF775 NJSEMI | Alldatasheet

Document overview

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Technical content

i, U na, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BF775

DESCRIPTION

  • Low Noise Figure NF = 1.8 dB TYP @VCE = 6 V, lc = 2 mA, f = 900 MHz
  • High Gain I S2ie 12 = 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz

APPLICATIONS

  • Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCES VGEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Tc=25"C Junction Temperature Storage Temperature Range VALUE 2.5 0.28 150 -65-150 UNIT V V V V mA mA W r SOT- 2 3 package T I 1: Base 2: Emitter "ET L 3: Collector DIM A B c D J H K L M mm MIN 0.37 1.19 2. 10 0. S3 1. 7S 2, cc 1. 10 0. -c 0. 076 MAX 0.51 1, ':0 2.30 I . Oo 2. 05 3. 05 1.30 0.61 0. 172 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Seini-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CEO ICES ICBO IEBO hpe fr COB PG PG

1 S21e 1 2

Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance Power Gain Power Gain Insertion Power Gain Insertion Power Gain Noise Figure Noise Figure CONDITIONS lc=1mA; IB=0 VCE= 20V; VBE= 0 VCB=10V;IE=0 VEB= 2.5V; lc= 0 lc=15mA;VcE=8V lo= 15mA ; VCE= 8V; f= 500MHz IE=0; VCB=10V;f=1MHz lc= 15mA ; VCE= 8V; f= 900MHz lc= 15mA ; VCE= 8V; f= 1.8GHz lc= 15mA ; VOE= 8V; f= 900MHz lc= 15mA ; VCE= 8V; f= 1 .8GHz lc= 2mA ; VCE= 6V; f= 900MHz lc= 2mA ; VCE= 6V; f= 1 .8GHz MIN 3.5 TYP. 0.38 9.5 12.5 1.8 2.9 MAX 0.1 0.1 200 0.6 UNIT V uA uA nA GHz pF dB dB dB dB dB dB