BF775 INFINEON | Alldatasheet
Document overview
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Technical content
/G01 Especially suitable for TV-Sat and UHF tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF 775 LOs 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 mA Base current IB 4 Total power dissipation TS/G01 48°C1) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point RthJS /G01 365 K/W 1TS is measured on the collector lead at the soldering point to the pcb
Electrical Characteristics
Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 10 µA Collector -base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 100 µA DC current gain IC = 10 mA, VCE = 8 V hFE 40 100 200 -
Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT 3.5 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.38 0.6 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.5 - Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz F 1.6 dB Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Gma 10.5 Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50/G02 , f = 900 MHz f = 1.8 GHz |S21e|2 7.5