BF771W SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Semiconductor Group 1 Dec-11-1996 BF 771W NPN Silicon RF Transistor

  • For modulators and amplifiers in TV and VCR tuners ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771W RBs Q62702-F1519 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 mA Base current IB 10 Total power dissipation TS ≤ 63 °C Ptot 580 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 150 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BF 771W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-11-1996 BF 771W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.74 0.1 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.28 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 1.8 - Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.1 1.3 dB Power gain 2) IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 15.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 7.5 13.5