BF770A INFINEON | Alldatasheet

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Technical content

1 Oct-26-1999

/G01 For IF amplifiers in TV-sat tuners and for VCR modulators VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF 770A LSs 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 mA Base current IB 6 Total power dissipation, TS /G01 63 °C F) Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance /G01 290 K/WJunction - soldering point RthJS 1TS is measured on the collector lead at the soldering point to the pcb

2 Oct-26-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues max.min. typ. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO - - V12 - - 100ICES µACollector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 µA10--IEBO hFE 50 100DC current gain IC = 30 mA, VCE = 8 V 200 -

3 Oct-26-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz fT 4.5 6 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.58 0.9 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.23 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 1.7 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 3.3 dB Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 13.5 8.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 6.5