BF763 NJSEMI | Alldatasheet
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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN 2 GHz wideband transistor BF763
DESCRIPTION
NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL V(BR)CEO Ic Pfot HFE fj PARAMETER collector-emitter breakdown voltage DC collector current total power dissipation DC current gain transition frequency CONDITIONS open base UP tO Tamb = 60 °C lc = 5 mA; VCE = 10 V; Tj = 25 °C lc = 5 mA; VCE = 10 V; f = 100 MHz MIN. TYP. 1.8 MAX. 360 250 UNIT V mA mW GHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO lc Plot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base up to Tamb = 60 °C MIN. -65 MAX. 360 150 150 UNIT V V mA mW THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air THERMAL RESISTANCE
250 K/W
\\.l .Semi-Oonduvtors reserves the right to change lest conditions, parameter limits ;md package dimensions without notice Information lumished by NJ Semi-Conductors n believed to he both accurate ami reliable ,il the lime of going to press. Hoxvever SI Scmi-C niiUuttiirc .ixsuiiKt mi responsibility for my errors or omissions discovered in its use NJ Semi-C „•:>, ii'rrs fn vcril\\H Jiil;v;hivi? ire. nrrtnf hetbrc nlntina
NPN 2 GHz wideband transistor BF763 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CEO V(BR)CBO VCE sat ICBO hFE fr F PARAMETER collector-emitter breakdown voltage collector-base breakdown voltage collector-emitter saturation voltage collector cut-off current DC current gain transition frequency noise figure CONDITIONS lc = 1 mA; IB = 0 lc = 10nA;lE = 0 lc= 10mA; IB= 1 mA IE = 0;VCB= 10V lc = 5mA;VCE=10V lc = 5 mA; VCE = 10 V; f = 100 MHz lc = 5 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C; Zs = 60 to MIN. TYP. 1.8 5.0 MAX. 0.5 250 UNIT V V V nA GHz dB DIMENSIONS (mm mrm tit* ortflJnri dfm«P>ion*) UNIT mrrt A b 048 0.40 0.66 o.se c 045 0,40 D 4.4 1,7 1.4 E 4.2 2.54 1.27 L 14,5 12.7 "T^T mu nw 1 T.™inj r,,™n.m. «Mn «i ion, ». unconlmto! lo allow for (tew ol plaslic and tominal irregularlliei OUTUM VERSION SOTM vardnt RIFBIBNCE9 IRC JEDIC TO-92 EIAJ SC^3