BF748 NJSEMI | Alldatasheet
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Technical content
, iJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN1 GHz wideband transistor BF748
FEATURES
- Stable oscillator operation
- High current gain
- Low feedback capacitance
- Good thermal stability.
DESCRIPTION
Low cost NPN transistor in a plastic SOT54 fTO-92 variant) envelope. It is intended for VHP and UHF TV tuner applications and can be used as a mixer and/or oscillator. QUICK REFERENCE DATA PINNING PIN uptoT. = 75°C(note1) I0 - 15 mA; VCE = 10 V; f = 500 MHz MIN. 0.8 TYP. 1.2 MAX. 20 ' £00 1.6 UNIT V V V mA mW GHz LIMITING VALUES In accordance with the Absolute Maximum System (I EC 134). SYMBOL VCBO VCK, VGK ICM PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector uptoT, = 75°C(note1) MIN. -55 MAX. 500 150 150 UNIT V V V mA mW Note 1. T, is the temperature at the soldering point of the collector lead, 4 mm from the body. VI .Semi-C (inductors reserves the right to change lest conditions, parameter limits ,md packuge dimensions without notice Information furnished by NJ Scmi-Conductois h believed to he birth accurate and reliable .it the lime or going to prws. However \\ Seini-t iwJutlors .bsuinct no ^pi'iisibiliiy tor ;my emirs ,>r umissiuns Jiscuvured in its u.se NJ Seini-CuinliKh.rs cncuuranes n-.ri nirrs h> u-iiK 'h.ll ilMhl-^hi-r'l? ir^ .•nrr.'nr Iwthre rtlncinu ,irtfi*n
NPN 1 GHz wideband transistor BF748 THERMAL RESISTANCE SYMBOL *** PARAMETER thermal resistance from junction to soldering point CONDITIONS uptoT,= 75°C(note1) THERMAL RESISTANCE
150 K/W
- T. is the temperature at the soldering point of the collector lead, 4 mm from the body. CHARACTERISTICS T, = 25 "C unless otherwise specified. SYMBOL ICK ft GUM PARAMETER collector cut-off current DC current gain transition frequency feedback capacitance maximum unilateral power gain (notel) CONDITIONS IE = 0;VOB = 10V lc = 2mA;VCE=10V l0=15mA;Vce = 10V;f=500MHz lE = i,-0;VCB=10V;f=1MHz lc » 15 mA; V& * 10 V; f = 100 MHz MIN. 0.8 TYP. 1.2 0.65 MAX. 100 250 1.6 UNIT nA GHz pF dB Note 1. GUM l»<na maximum unilateral power gain, assuming S12 is zero and G^,,«10 log —— —— dB.