BF721 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
PNP Silicon High-Voltage Transistors BF 721 BF 723 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BF 721 BF 723 Q62702-F1239 Q62702-F1309 BF 721 BF 723 SOT-223 1 2 3 4 B C E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 VCER V Peak collector current ICM Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TS ≤ 110 ˚C2) Ptot W Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient2) Rth JA ≤ 87 K/W 100 1.5 150 – 65 … + 150 Emitter-base voltage VEB0 300 250 300 250 BF 721 BF 723 Junction - soldering point Rth JS ≤ 27 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- Suitable for video output stages in TV sets and switching power supplies
- High breakdown voltage
- Low collector-emitter saturation voltage
- Low capacitance
- Complementary types: BF 720/722 (NPN) 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. DC current gain1) IC = 25 mA,VCE = 20 V Collector-emitter cutoff current VCE = 200 V,RBE = 2.7 kΩ VCE = 200 V,RBE = 2.7 kΩ ,TA = 150 ˚C Collector-emitter breakdown voltage IC = 10µA,RBE = 2.7 kΩ BF 721 VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 BF 723 V(BR)CE0 250 – – nACollector-base cutoff current VCB = 200 V,IE = 0 ICB0 ––1 0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA,IB = 0 BF 721 BF 723 V(BR)CB0 300 250 Emitter-base breakdown voltage IE = 10µA,IC = 0 V(BR)EB0 5–– VCollector-emitter saturation voltage IC = 30 mA,IB = 5 mA VCEsat – – 0.6 –hFE 50 – – µAEmitter-base cutoff current VEB = 5 V,IC = 0 IEB0 ––1 0 MHzTransition frequency IC = 10 mA,VCE = 10 V,f = 100 MHz fT – 100 – AC characteristics pFCollector-base capacitance VCB = 30 V,IC = 0,f = 1 MHz C obo – 0.8 – V(BR)CER 300 – – nA µA ICER 1) Pulse test conditions:t≤ 300 µs,D = 2 %.
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Collector currentIC = f(VBE ) VCE = 20 V Collector cutoff currentICB0 =f (TA) VCB = 200 V Permissible pulse loadPtot max/Ptot DC =f (tp)
DC current gainhFE = f(IC ) VCE =2 0V Collector-base capacitanceC obo =f (VCB ) IC = 0,f = 1 MHz Transition frequencyfT = f(IC ) VCE =1 0V ,f = 100 MHz