BF689K NJSEMI | Alldatasheet
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^s-mi-dondaatoi iPzooucfd, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN 2 GHz wideband transistor BF689K
DESCRIPTION
NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHP and UHF range. PINNING PIN Fig.1 SOT54. SYMBOL VCBO VCEO Ptot HFE fj PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency CONDITIONS open emitter open base up to Tamb = 60 °C lc = 2mA;VCE = 5V; Tj = 25 °C lc = 20 mA; VCE = 5 V; Tj = 25 °C lc = 15 mA; VCE = 5 V; f = 500 MHz MIN. TYP. 1.8 MAX. 360 UNIT V V mA mW GHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VCER VEBO lc ICM Plot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base RBE < 50 ti open collector tp < 1 (as up to Tamb= 60 °C MIN. -55 MAX. 3.5 360 150 150 UNIT V V V V mA mA mW N.I .Semi-C't mduuon reserves the right In change lest conditions, parameter limin ;md package dimensions without notice Infbrmalion liiirmhed by NJ Semi-0'urtduclon it believed to he both accurate and reliable ,il the lime or going lit press. However \\ Scmi-l nndiitlors .usuiiies nn re->poiuibilily lor ;my errors ,<r omissions discovered in its use NJ Senii-C iinJm.li.rs cricounmes H in inrri In u-rift 'h.H 'fcilsKhri-r* in-. urn-nl fwtfore olncini? nnh>n
NPN 2 GHz wideband transistor BF689K THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air THERMAL RESISTANCE
250 K/W
TJ = 25 °C unless otherwise specified. SYMBOL ICBO IEBO VCE sat VBE sat HFE fT cre GP F PARAMETER collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain transition frequency feedback capacitance power gain noise figure CONDITIONS IE = 0;VCB=15V lc = 0; VEB = 2 V lc = 25 mA; IB = 1 .25 mA lc = 25 mA; IB = 1 .25 mA lc = 2 mA; VCE = 5 V lc = 20 mA; Vce = 5 V lc = 15 mA; VCE = 5 V; f = 500 MHz lc = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C lc = 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; 2S = 60 Q; RL = 2 kfi lc = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; Zs = 60 ii; RL = 920 Q lc - 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; Zs = 60 £i lc = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; Zs = 60 £} MIN. TYP. 1.8 1.1 MAX. 1.0 1.0 UNIT nA HA V V GHz PF dB dB dB dB r DIMENSIONS (mm mim tM OTfglnW dhntnckHW) UNIT mm A b 0.48 0.40 0,66 0.56 e 0.45 0,40 D 4,6 4,4 d 1.4 E L L,«l nnw La max 1 Tarmlnal dlmonBion* with>n tnls zone am uncontroUvd to allow for flow ol plastic and Iflnnlnal irregulantto. OUTLINE VERSION SOT54 variant RBFEMNCn IEC JEHC TO-92 L B1*J SC-43