BF660 SIEMENS | Alldatasheet
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Technical content
PNP Silicon RF Transistor BF 660
- For VHF oscillator applications Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BF 660 Q62702-F982LEs SOT-23 1 2 3 B E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Thermal Resistance Junction - ambient2) Rth JA ≤ 450 K/W Total power dissipation,TA ≤ 25 ˚C Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Emitter current IE 30 Junction temperature Tj 150 ˚C Collector current IC 25 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR) CE0 30 – – nACollector cutoff current VCB = 20 V,IE = 0 ICB0 ––5 0 –DC current gain IC = 3 mA,VCE = 10 V hFE 30 – – Collector-base breakdown voltage IC = 10µA,IE = 0 V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10µA,IC = 0 V(BR) EB0 4–– MHzTransition frequency IC = 5 mA,VCE = 10 V,f = 100 MHz fT – 700 – pFCollector-base capacitance VCB = 10 V,VBE = 0 V,f = 1 MHz C cb – 0.6 – Collector-emitter capacitance VCE = 10 V,VBE = 0 V,f = 1 MHz C ce – 0.28 –
Total power dissipationPtot =f (TA ) Collector-base capacitanceC cb =f (V CB ) f = 1 MHz Transition frequencyfT =f (IC ) VCE = 10 V,f = 100 MHz