BF622 SIEMENS | Alldatasheet
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Technical content
NPN Silicon High-Voltage Transistor BF 622 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BF 622 Q62702-F1052DA SOT-89 1 2 3 B C E Thermal Resistance Junction - ambient2) Rth JA ≤ 90 K/W Junction - soldering point Rth JS ≤ 30 Parameter Symbol Values Unit Collector-emitter voltage VCE0 250 V Peak collector current ICM 100 Collector current IC 50 mA Junction temperature Tj 150 ˚C Total power dissipation,TS = 120 ˚C Ptot 1W Storage temperature range Tstg – 65 … + 150 Collector-base voltage VCB0 250 Emitter-base voltage VEB0 5 Collector-emitter voltage,RBE = 2.7 kΩ VCER 250 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- Suitable for video output stages in TV sets
- High breakdown voltage
- Low collector-emitter saturation voltage
- Low capacitance
- Complementary type: BF 623 (PNP) 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Collector cutoff current VCE = 200 V,RBE = 2.7 kΩ VCE = 200 V,RBE = 2.7 kΩ , TA = 150 ˚C VCollector-emitter breakdown voltage IC = 1 mA IC = 10µA,RBE = 2.7 kΩ V(BR)CE0 V(BR)CER 250 250 Collector-base breakdown voltage IC = 10µA V(BR)CB0 250 – – –DC current gain1) IC = 25 mA,VCE = 20 V hFE 50 – – MHzTransition frequency IC = 10 mA,VCE = 10 V,f = 20 MHz fT – 100 – UnitValuesParameter Symbol min. typ. max. DC characteristics AC characteristics Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nA µA Collector cutoff current VCB = 200 V VCB = 200 V,TA = 150 ˚C ICB0 100 Emitter cutoff current V EB = 5 V IEB0 ––1 0 VCollector-emitter saturation voltage1) IC = 10 mA,IB = 1 mA VCEsat – – 0.5 Base-emitter saturation voltage1) IC = 10 mA,IB = 1 mA VBEsat ––1 µAICER pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 0.8 – 1) Pulse test:t≤ 300 µs,D = 2 %.
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Output capacitanceC obo = f(VCE ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 10 V,f = 20 MHz
DC current gainhFE = f(IC ) VCE = 20 V Collector cutoff currentICB0 = f(TA) VCB = 200 V Collector currentIC = f(VBE ) VCE = 20 V