BF554 SIEMENS | Alldatasheet
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Technical content
NPN Silicon RF Transistor BF 554 l For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BF 554 Q62702-F1042CC SOT-23 1 2 3 B E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 30 Emitter-base voltage VEB0 5 Thermal Resistance Junction - ambient2) Rth JA £ 450 K/W Total power dissipation,TA £ 25 ˚C Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Junction temperature Tj 150 ˚C Collector current IC 30 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm· 16.7 mm · 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR) CE0 20 – – nACollector cutoff current VCB = 20 V,IE = 0 ICB0 – – 100 –DC current gain IC = 1 mA,VCE = 10 V hFE 60 – 250 VBase-emitter voltage IC = 1 mA,VCE = 10 V VBE – 0.7 – MHzTransition frequency IC = 1 mA,VCE = 10 V,f = 100 MHz fT – 250 – pFCollector-base capacitance VCE = 10 V,VBE = 0 V,f = 1 MHz C cb – 0.6 – mSOutput conductance IC = 1 mA,VCE = 10 V,f = 0.5...10 MHz g22e –4– dBNoise figure IC = 1 mA,VCE = 10 V f = 200 kHz,gS = 2 mS f = 1 MHz,gS = 1.5 mS f = 100 MHz,gS = 10 mS F 1.5 1.2
Total power dissipationPtot =f (TA ) Collector currentIC =f (V BE ) VCE = 10 V DC current gainhFE =f (IC ) VCE = 10 V Collector-emitter saturation voltage V CEsat =f (IC ) hFE = 10
Collector cutoff currentICB0 =f (TA ) VCB = 20 V Collector-base capacitanceC cb =f (V CB ) f = 1 MHz Transition frequencyfT =f (IC ) VCE = 10 V,f = 100 MHz Noise figureF =f (f) IC = 1 mA,VCE = 10 V,RS = 60W