BF550 SIEMENS | Alldatasheet
Document overview
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Technical content
PNP Silicon RF Transistor BF 550 l For common emitter amplifier stages up to 300 MHz l For mixer applications in AM/FM radios and VHF TV tuners l Low feedback capacitance due to shield diffusion l Controlled low output conductance Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BF 550 Q62702-F944LA SOT-23 1 2 3 B E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Thermal Resistance Junction - ambient2) Rth JA £ 450 K/W Total power dissipation,TA £ 25 ˚C Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Base current IB 5 Junction temperature Tj 150 ˚C Collector current IC 25 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm· 16.7 mm · 0.7 mm. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics AC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR) CE0 40 – – Collector-base breakdown voltage IC = 10mA,IE = 0 V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10mA,IC = 0 V(BR) EB0 4–– nACollector cutoff current VCB = 30 V,IE = 0 ICB0 – – 100 –DC current gain IC = 1 mA,VCE = 10 V hFE 50 – 250 VBase-emitter voltage IC = 1 mA,VCE = 10 V VBE – 0.72 – MHzTransition frequency IC = 1 mA,VCE = 10 V,f = 100 MHz fT – 350 – pFCollector-base capacitance VCB = 10 V,VBE = 0 V,f = 1 MHz C cb – 0.33 – Collector-emitter capacitance VCE = 10 V,VBE = 0 V,f = 1 MHz C ce – 0.67 – dBNoise figure VCE = 10 V IC = 1 mA,f = 100 kHz,RS = 300W IC = 2 mA,f = 100 MHz,RS = 60W F 3.4 mS pF mS pF mS mS f = 0.45 … 10 MHz f = 500 kHz f = 10 MHz g11e C 11e Iy21e I C 22e g22e g22e 550 1.3 Y parameters, common emitter IC = 1 mA,VCE = 10 V
Total power dissipationPtot =f (TA ) Collector currentIC =f (V BE ) VCE = 10 V DC current gainhFE =f (IC ) VCE = 10 V Collector-emitter saturation voltage V CEsat =f (IC ) hFE = 10
Collector cutoff currentICB0 =f (TA ) VCB = 30 V Collector-base capacitanceC cb =f (V CB ) f = 1 MHz Transition frequencyfT =f (IC ) f = 100 MHz Output conductanceg22e =f (IC ) VCE = 10 V,f = 500 kHz
Forward transfer admittanceIy21e I =f (IC ) f = 10.7 MHz Forward transfer admittancey21e VCE = 10 V