BF543 INFINEON | Alldatasheet
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Silicon N-Channel MOSFET Triode /G01 For high-frequency stages up to 300 MHz preferably in FM applications /G01/G02 IDSS = 4mA, gfs = 12mS VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF543 LDs 1 = G 2 = D 3 = S SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current /G01/G02 IGSM 10 Total power dissipation, TS /G03 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Ambient temperature range TA -55 ... 150 Channel temperature Tch 150 Thermal Resistance Channel - soldering point1) Rthchs /G01 370 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V V(BR)DS 20 - - V Gate-source breakdown voltage /G01 /G01 IGS = 10 mA, VDS = 0 /G01 /G01 V(BR)GSS 7 - 12 Gate-source leakage current /G01 /G01 VGS = 6 V, VDS = 0 /G01 IGSS - - 50 nA Drain current VDS = 10 V, VGS = 0 IDSS 2 4 6 mA Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance VDS = 10 V, ID = 4 mA gfs 9.5 12 - mS Gate input capacitance VDS = 10 V, ID = 4 mA, f = 1 MHz Cgss - 2.7 - pF Reverse tranfer capacitance VDS = 10 V, ID = 4 mA, f = 1 MHz Cdg - 18 - fF Output capacitance VDS = 10 V, ID = 4 mA, f = 1 MHz Cdss - 0.9 - pF Power gain (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, ID = 4 mA, f = 200 MHz Gp - 22 - dB Noise figure (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, ID = 4 mA, f = 200 MHz F - 1 -
Output characteristics ID = f (VDS) EHT07026BF 543 ΙD DSV mA
10 V 20
VGS = 0.2 -0.2 -0.4 V V V V V 0.4 Total power dissipation Ptot = f(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 P tot Gate transconductance gfs = f (VGS) VDS = 10, IDSS = 4mA, f = 1kHz -0.10 EHT07027BF 543 gfs GSV 0 V 0.1 mS Drain current ID = f (VGS) VDS = 10V -0.10 EHT07028BF 543 ΙD GSV mA 0 V 0.1
Gate input capacitance Cgss = f (VGS) VDS = 10, IDSS = 4mA, f = 1MHz -0.10 EHT07029BF 543 C gss GSV 0 V 0.1 pF Output capacitance Cdss = f (VDS) VGS = 0, IDSS = 4mA, f = 1MHz EHT07030BF 543 C dss DSV pF 51 01 5 V Reverse transfer capacitance Cdg = f (VDS) VGS = 0, IDSS = 4mA, f = 1MHz EHT07031BF 543 C dg DSV fF 51 01 5 V Gate input admittance y11s VDS = 10, IDSS = 4mA, VGS = 0 (source circuit) EHT07032BF 543 b 11sg 11s 100 200 300 400 500 600 700 = 800f mS MHz MHz MHz MHz MHz MHz MHz MHz MHz
Gate forward transfer admittance y21s VDS = 10V, IDSS = 4mA, VGS = 0 (source circuit) 0-10 EHT07033BF 543 b 21sg 21s = 800f700 600 500 400 300 200 100 51 0 m S 1 5 mS MHzMHz MHz MHz MHz MHz MHz MHz MHz Output admittance y22s VDS = 10V, IDSS = 10mA, VGS = 0 (source circuit) EHT07034BF 543 b 22sg mS22s 100 200 300 400 500 600 700 = 800 f MHz MHz MHz MHz MHz MHz MHz MHz MHz