BF517

BF517 SIEMENS | Alldatasheet

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Semiconductor Group 1 Aug-02-1996 BF 517 NPN Silicon RF Transistor

• For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration Package BF 517 LRs Q62702-F42 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current f ≥ 10 MHz ICM Total power dissipation TS ≤ 55 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 340 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

Semiconductor Group 2 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 15 V, IE = 0 ICBO - - 50 nA DC current gain IC = 5 mA, VCE = 10 V hFE 25 - 250 Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.5 V AC Characteristics of any single Transistor Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz fT 1 2 - GHz Collector-base capacitance VCB = 5 V, VBE = vbe = 0 , f = 1 MHz C cb 0.3 0.55 0.75 pF Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz C ce - 0.25 0.4 Input capacitance VEB = 0.5 V, IC = ic = 0 , f = 1 MHz C ibo - 1.45 - Output capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz C obs - 0.8 - Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 75 Ω F - 2.5 - dB

Semiconductor Group 3 Aug-02-1996 BF 517 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 mW 300 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 3 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 4 Aug-02-1996 BF 517 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 20 V 26 V CB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC ) f = 500MHz VCE = Parameter 0 5 10 15 20 mA 30 IC 0.0 0.5 1.0 1.5 2.0 GHz 3.0 fT 10V 0.7V Package