BF507 SIEMENS | Alldatasheet
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25C D mM 4235605 0004513 8 MESIEG ~ TF Bl-e | “NPN Silicon RF Transistor BF 507 \\ BF 607 is an NPN silicon planar RF transistor in TO 92 plastic package (10 A 3 DIN 41868). H The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF 1 oscillators. | i : H 25max. BEC i Type Ordering code . bene is | . BF 607 | 062702-F571 of 3 Th, 5.2.9, des lay t Approx. weight 0.25 g Dimensions in mm i Maximum ratings (Tamp = 25°C) . ‘ Collector-emitter voltage Veco 25 iv i Collector-base voltage Veeo | 30 v Emitter-base voltage Veso | 3 v t Collector current Ic 20 -| mA : Collector peak current Tow 50 mA $ Base current Ig 5 mA . Junction temperature Tj 150 °c : Storage temperature range Tate -55 to #150 | °C Total power dissipation Prot 600 mw Thermal resistance . Junction to ambient air Rina | $260 | Kw i rr |::) 1936 E-13 .
25C ) mm 8235605 OOO4SD4 T MESIEG 727 3/~.2 "04514 OD SIEMENS AKTIENGESELLSCHAF = BF 507 Static characteristics (Tamp = 25°C) Collector cutoff current (Vego = 25 V) Teo $100 nA Collector-emitter breakdown voltage (Ic = 1 mA) Vierrceo | 225 v : Collector-base breakdown voltage Uc = 10 A) Verycso | 230 v Emitter-base breakdown voltage Ug = 10 nA) Vierie8o 23 Vv DC current gain Ug = 1 mA; Vee = 10V) hee 230 - (cg = 5 mA; Veg = 10 V) re 240 - Base-emitter voltage {Ic = 5 mA; Vee = 10 V) Vae $0.95 v Collector-emitter saturation voltage Uc = 5 mA; Ig = 0.5 mA) Veesat 50.6 Vv Dynamic characteristics (Tamp = 25°C) Transition frequency {ig = mA; Veg = 10 V; f = 100 MHz) f 2750 MHz i Noise figure : Uc = 3 mA; Veg = 10V; f= 200 MHz; Ry = 609) NF 3 aB . Collactor-base capacitance : (f= 1 MHz; Vge = OV)" Cca $0.75 pF 3 Collecor-emitter capacitance (f = 1 MHz: Vog = 10 V; Vag = OV)? Cce 0.36 t00.65 | pF 1) Third terminal at screening potential a? 660 1937 E-14 . 7 ®