BF503 SIEMENS | Alldatasheet
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_ @5C D MM 4235605 000450? 2 MMSIEG © -—7~3y-2I : NPN Silicon RF Transistor BF 503 | SIEMENS AKTIENGESELLSCHAF { i BF 503 is an NPN silicon planar RF transistor in TO 92 plastic package (10 A 3 DIN 41868). H The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF { oscillators. i : i 25max. BEC 1 Type Ordering code 6x04 4a 2 ! . BF 603 | 062702-F574 g RS : i Wh, 152, ak des Zan 5 Approx. weight 0.26 g Dimensions in mm : Maximum ratings (Temp = 25°C) : Collector-emitter voltage Veco 30 Vv . Collector-base voltage Veso 40 Vv . Emitter-base voltage Vex0 4 v 3 Collector current Ic 20 mA : Collector peak current . Tem 50 mA . Base current Ig 5 mA : Junction temperature yj 150 °C : Storage temperature range Tg 55 to +150 | °C : Total power dissipation Prot 500 mw Thermal resistance Junction to ambient air Rina | s260 | Kw : . i 1930 £-07 oe 563
= a ° . . _ 25C D MM 8235605 0004508 4 MMSIEG : 7-3 !/-2 25C 04508 i?) BF 503 Static characteristics (Temp = 25°C) Collector cutoff current (Vego = 25 V) Teao $100 nA Collector-emitter breakdown voltage ° Uc = 1 mA) Vericeo | 230 v Collector-base breakdown voltage (Ic = 10 pA) Visriceo 240 Vv Emitter-base breakdown voltage (lg = 10 pA) Vier)eso a4 Vv DC current gain .t (Ig = 1 mA; Vee = 10 V) Dee 230 - (Ig = 5 mA; Veg = 10 V) hee 240 - Collector-emitter saturation voltage (Ig = § mA; Ig = 0.5 mA) Veesat $0.6 v Dynamic characteristics (Tamp = 25°C) Transition frequency Uc = 5 mA; Vee = 10 V; f = 100 MHz) ft 750 (2400) MHz Noise figure : {ic = 3 mA; Vee = 10 V; f = 200 MHz; Ry = 60.2) NF 3 (<6) dB i Collector-base capacitance : (f= 1 MHz; Vog = 10 V; Veg = OV)" Coa 0,55 (<0,7) pF Collector-emitter capacitance (f= 1 MHz: Veg = 10 V; Vag = OV)? Coe $0.65 pF : Output admittance ; Ug = 1 mA; Voce = 10 V; f = 10.7 MHz) 9226 $10.5 4s i 1) Third terminal at creening potential. BA . (1931 E-08