BF502 SIEMENS | Alldatasheet
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25¢ D mM 4235605 a004505 9 MESIEG " Te 3l- 21 ° oo NPN Silicon RF Transistor BF 502 . i SIEMENS AKTIENGESELLSCHAF ‘4505 0 | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package (10 A 3 DIN 41868). : The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF oscillators. 1 i 25mox. BEC | Type Ordering code : Ofr04 de 4 | BF 502 | 062702-F572 ¥ a : 1, —452 q4 2 ba : Approx. weight 0.26 g Dimensions in mm | Maximum ratings (Tam = 25°C) i Collector-emitter voltage Veeo 30 Vv a Collector-base voltage Veso | 40 v : Emitter-base voltage Veso | 4 v : Collector current Ic 20 mA Collector peak current Tews 50 mA | Base current lp 5 mA Junction temperature jj 150 °C i Storage temperature range . Tag 56 to+150 | °C 3 Total power dissipation Prot 500 mw : Thermal resistance . Junction to ambient air Riya | $250 | Kw + F (1928 £-05 a o 551 ,
| 25¢ D MH 8235605 OOO4SOL O MMSIEG. Te F1-21 25C 04506 1?) BF 502 SIEMENS AKTIENGESELLSCHAPF WW ___ Static characteristics (Tomb = 25°C) Collector cutoff current : (Vego = 25 V) Teao $100 nA : Collector-emitter breakdown voltage (ic = 1 mA) Viericeo | 230 v : Collector-base breakdown voltage . Ug = 10 HA) Vericao | 240 Vv . Emitter-base breakdown voltage (eg = 10 pA) Viereso | 24 v DC current gain : Uc = 1 mA; Veg = 10) hee 230 - : Uc = 5 mA; Vee = 10 V) hee 240 - Collector-emitter saturation voltage . (Ic = 6 mA; Ig = 0.5 mA) Veesat 30.6 v Dynamic characteristics (Tamp = 25°C) : Transition frequency Ue = 6 mA; Veg = 10 V; f = 100 MHz) fr 700 (2350) | MHz 5 Noise figura : Uc = 3 mA; Vee = 10 V; f = 200 MHz; Rg = 600) NF 3 (<8) dB i Collector-base capacitance (f= 1 MHz; Vog = 10 V; Vag = OV)? Coa $0.35 pF Output ddmittance . Uc = 1 mA; Veg = 10V; f = 10.7 MHz) 9220 510.5 2S 1 Third terminal at screening potential. . 552 tony ’ : 1929 E-06 .