BF496 NJSEMI | Alldatasheet
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'j.Eis.e.u <z~>£mi-L,onauctoi L/^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BF496 SILICON PLANAR TRANSISTOR NPN transistor in a plastic TO-92 envelope Intended for VHP applications, e.g. as gain controlled pre- amplifier in VHP television and FM tuners. QUICK REFERENCE DATA Collector-base voltage (open emitter) Collector-emitter voltage Collector current (DC) (open base) Total power dissipation up to Tamb = 75 °C Junction temperature Transition frequency VCBO VCEO ptot TJ -lE-2mA;VCB" 10V fT MECHANICAL DATA Flg.1 TO-92. Pinning 1 = emitter . / 2 = base b~\\ •= collector max. max. max. max. max. min. 30 V 20 V 20 mA 300 mW 150 °C
300 MHz
B _, i 0.40 I min 4.2 max- - 5.2 max • ,67 max
- 12.7 min (0.49 [ max diameter within 2.5 max "is uncontrolled N.I Semi-Conductor* reserves (he right to change test conditions, parameter limits and package dimensions without notice Inl'ormalion f'unmncd b-y N) Sumi-C'unductofs it believed to be bulb accurate and reliable ,il the time of going to press. However ^ I Scini-L imJuUors .IMIIIIICS n» respunsibility tor my ermrs or uiniuiiins Jiswvurcd in us u.se M Semi-<.»iiultn.l( rs e IKN ircrs In vcrit\\H il:ila-;h.-fH ire inrrcnf heftire olncina nnkn
Limiting values In accordance with the Absolute Maximum System (IEC134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector-emitter voltage (RBE < 1 kn> Emitter-base voltage (open collector) Collector current (DC) Collector current (peak value) !CM Total power dissipation up to TamD = 75 °C Ptot Storage temperature range Junction temperature THERMAL RESISTANCE From Junction to ambient In free air CHARACTERISTICS Tamo - 25 °C unless otherwise specified DC current gain -lE-2mA;VCB-10V -lE-12mA;VCB-7 v* Emitter-base voltage -lE = 2mA;VCB-10V -lE-12mA;VCB-7V* Transition frequency -lE-4mA;VCB-5V Feedback capacitance at f " 10,7 MHz 160 °C Collector cut-off current IE-0;VCB-20V I E - 0; VCB - 20 V; Tamb Emitter-base cut-off current IC-0;VEB-2V y-parameters at f = 100 MHz (common base) Input conductance Input susceptance Feedback admittance Phase angle of feedback admittance Transfer admittance Phase angle of transfer admittance Output conductance Output susceptance y-parameters at f - 60 MHz (common base) Input conductance Input susceptance Feedback admittance Phase angle of feedback admittance Transfer admittance Phase angle of transfer admittance Output conductance Output susceptance y-parameters at f = 200 MHz (common base) Input conductance Input susceptance Feedback admittance Phase angle of feedback admittance Transfer admittance Phase angle of transfer admittance Output conductance Output susceptance stg "FE "FE Cre EO t j i-a EB EB max. max. max. max. max. max. max. -65 to + max. mln. mln. max. max. 30 V 20 V 30 V 3 V 20 mA 20 mA 300 mW 150 °C 150 °C
420 K/W
0.9 V 1.0 V 300 to 800 MHz O Sib -bib [Vrbj ^rb |Yfb| f>fb Sob bob 9ib -bib |Yrb| ¥»rb lYfbl Vfb Sob bob 9ib -bib |Yrb| Vrb lYfbl Vfb 9ob bob max. typ. max. max. max. max. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ. typ.
530 MHz
0.8 pF 1.0 pF 500 nA 10 MA 500 nA 66 mS 16 rnS 190 mS 280° 66 mS 1550 15 #S 660 ttS 9.5 mS 12 mS 100 juS 2700 95 mS 1600 10 juS 350 its 70 mS 48 mS 340 0S 275° 85 mS 130° 7.5. *iS 1.3 mS