BF472 NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP high-voltage transistors BF470; BF472
FEATURES
- Low feedback capacitance.
APPLICATIONS
- Class-B video output stages in television receivers and for high-voltage IF output stages.
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. PINNING PIN collector, connected to mounting base base Top view Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Plot hFE Cre fl PARAMETER collector-base voltage BF470 BF472 collector-emitter voltage BF470 BF472 peak collector current total power dissipation DC current gain feedback capacitance transition frequency CONDITIONS open emitter open base Tmb<114°C lc = -25 mA; VCE = -20 V Ic = ic = 0; VCE = -30 V; f = 1 MHz lc = -10 mA; VCE = -10 V; f = 100 MHz MIN. MAX. -250 -300 -250 -300 -100 1.8 1.8 UNIT V V V V mA W pF MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
PNP high-voltage transistors BF470; BF472 LIMITING VALUES In accordance with the Absolute Maximum Rating System (EC 134). SYMBOL VCBO VCEO VEBO Ic ICM IBM Plot Tstg Tj Tgmb PARAMETER collector-base voltage BF470 BF472 collector-emitter voltage BF470 BF472 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tmb<114°C MIN. -65 -65 MAX. -250 -300 -250 -300 -50 -100 -50 1.8 +150 150 +150 UNIT V V V V V mA mA mA W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rfh j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air; note 1 VALUE 100 r 20 UNIT K/W K/W Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead minimum 10 x 10 mm. CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL ICBO IEBO HFE VcEsat Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = -200 V IE = 0; VCB = -200 V; Tj = 1 50 °C Ic = 0; VEB = -5 V Ic = -25 mA; VCE = -20 V lc = -30 mA; IB = -5 mA lc = "c = 0; VCE = -30 V; f = 1 MHz lc = -10 mA; VCE = -10 V; f = 100 MHz MIN. MAX. -10 -10 -50 -600 1.8 UNIT nA HA nA mV PF MHz
PNP high-voltage transistors BF470; BF472 PACKAGE OUTLINE 1*54 < max 2.7 max L Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. -•- 78 max - 3.2 3.0 3.75 11.1 max --1.2 0.5 0.88_ max 15.3 min 2 3 , ft [2"29l 90° Fig.2 TO-126; SOT32.