BF471 NJSEMI | Alldatasheet
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Technical content
, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN high-voltage transistors BF469; BF471
FEATURES
- Low feedback capacitance.
APPLICATIONS
- Intended for class-B video output stages in television receivers and for high-voltage IF output stages.
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package. PNP complements: BF470 and BF472. PINNING PIN collector, connected to mounting base base Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO 'CM Plot hFE Cre fr PARAMETER collector-base voltage BF469 BF471 collector-emitter voltage BF469 BF471 peak collector current total power dissipation DC current gain feedback capacitance transition frequency CONDITIONS open emitter open base Tmb<114°C lc = 25 mA; VCE = 20 V Ic = ic = 0; VCE = 30 V; f = 1 MHz lc = 10mA; VCE = 10V;f= 100MHz MIN. MAX. 250 300 250 300 100 1.8 1.8 UNIT V V V V mA W pF MHz VI .Semi-Conductors reserves the righl lo change test conditions, parameter limits ;md package dimensions without notice Information famished by NJ Somi-t onilucluri it believed to h« hulh accurate and reliahle .U the lime of going lt> press. However Semi-I DiiJiwlors .UMIIMO IM rcspuiisibility tor ;my errors .'r omissions Jiscuvurcd in its use NJ Semi-<_ ondiiUi >rs cncourases i«n riiir1; tn \\crit\\n •liit.vhceM ire current h<ftirc olncina unlen
NPN high-voltage transistors BF469; BF471 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic ICM IBM Plot Tstg Tj 'amb PARAMETER collector-base voltage BF469 BF471 collector-emitter voltage BF469 BF471 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tmb<114°C MIN. -65 -65 MAX. 250 300 250 300 [50 100 1.8 +150 150 +150 UNIT V V V V V mA mA mA W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air; note 1 VALUE 100 UNIT K/W K/W Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead minimum 10 x 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VcEsat Cre fr PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 °C lc = 0; VEB = 5 V lc = 25 mA; VCE = 20 V lc = 30 mA; IB = 5 mA lc = "c = 0; VCE = 30 V; f = 1 MHz lc = 10 mA; VCE = 10 V; f = 100 MHz MIN. MAX. 0,6 1.8 UNIT nA uA nA V PF MHz
NPN high-voltage transistors BF469; BF471 PACKAGE OUTLINE 2.7 max L Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. 3.2 3.0 - 7.8 max - t 3.75 11.1 max -•-1.2 0.5 088_ max 15.3 min 2 3 , -J4 90° Fig.2 TO-126; SOT32.