BF457 SIEMENS | Alldatasheet
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“ 25C D MM 8235605 OOO4NSS T mMSIEG’ T-3(-23 | NPN Silicon RF Transistors BF 457 i BF 458 : 75C 04495 D—— BE 459 j SIEMENS AKTIENGESELLSCHAF i for video and AF output stages q BF 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic : package (12 A 3 DIN 41 869). The collector is conductively connected to the metallic i mounting area of the transistor. The transistors are especially designed for use in video i output stages of TV receivers, for AF output stages of high operating voltage, and as driver i transistors in horizontal deflection circuits. i in, i
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Type Ordering code eens Ue 4 BF 457 Q62702-F315 a =|_* ‘ BF 458 062702-F316 a2 opus!) : BF 469 062702-F317 4 ene 4 Mica washer 062902-B62 ‘| i Spring washer | 62902-B63 : A3 DIN 137 i H Approx. weight 0.5 g Dimensions in mm i a Maximum ratings BF457 | BF458 | BF 469 : Collector-base voltage Vea 160 270 300 v Collector-emitter voltage Veco 160 250 300 v Emitter-base voltage Veso 5 5 5 v : Collector current Ic 100 100 100 mA 4 Base current Ip 50 50 50 mA : Collector peak current Toss 300 300 300 mA : Junction temperature yj 160 160 150 °c Storage temperature range Tog 55 to +150 °c . Total power dissipation . (Tamb 5 25°C) Prot 1.2 1.2 12 w ; (Tease 8 45°C) Prot 10 10 10 w Thermal resistance Junction to ambient air Renaa. | $104 | $104 | $104 | Kw Junction to case Rinuc! $10 $10 $10 KW 1) Starting torque for the M3 screw used for mounting = mex. 0.8 Nm. Thermal resistance of a 50 » mica washer, ungreased 8 K/W; greased 4 K/W. A washer or corrugated spring washer A 3 DIN 137 should be placed below the screw head. 541 1918 0-09
25C D MM 4235605 OOO449L 1 MESIEG:. 7~3/-72 : 25C 04496 0. BF 457 BF 458 : Static characteristics (Tam) = 25°C) BF 457 BF 458 BF459 . Collector-base breakdown voltage (Ic = 100 1A) Vieryceo | >160 >250 >300 v . Collector-emitter breakdown i voltage (Ic = 10 mA) Vieryceo | >160 >250 >300 v : Emitter-base breakdown , voltage (/e = 100 A) Verieso | >5 >5 >5 v : Collector cutoff current : (Veg = 100 v) Tego <50 - - nA (Vea = 200 v) Tego - <50 - nA H (Veg = 250 Vv) Ieao - - <50 nA : Emitter cutoff current (Ves = 3V) Teao <50 <50 <50 nA Collector-emitter saturation voltage (Ic = 30 mA; : Ig = 6 mA) Veksat <1 <1 <1 Vv DC current gain (Ig = 30 mA; Vee = 10V) bre >25 >25 >26 - : Dynamic characteristics (Tam) = 25°C) . : Transition frequency (Vce = 10 V: i Ig = 15 mA; f = 20 MHz) fr 90 90 90 MHz j Reverse’transfer capacitance | (Vee = 30 V; f= 1 MHz; : Ie = 1 mA) “C12, | 4.2 42 42 pF . Output capacitance (Vg = 30 V; tot f= 1 MHz; Ie = 0) Crm «| 5.5 55 55 pF ce i i 542 ~ . 1919 D-10 .
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1920 O-11
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